Publication detail

Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching

DALLAEVA, D. PROKOPYEVA, E. TOMÁNEK, P. GRMELA, L. RAMAZANOV, S.

Original Title

Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching

Czech Title

Interferometrie a AFM substrátů pro optoelektroniku modifikovaných pomocí plasmatického leptání

English Title

Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching

Type

conference paper

Language

en

Original Abstract

The paper describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching and its characterization. The study confirms the possibility of using dry plasma etching processes for wide band gape materials treatment, since the condition of the substrate surface is an important parameter for electronic and optoelectronic devices manufacturing. Processed substrates were studied by interferometry to define the etch depth, and by atomic force microscopy to study the topography and statistical analysis of surface roughness before and after etching. The interferometry reveals the dependence of etch rate on the angle between the substrates and defocused beam of argon ions. It is also shown in low scale image that the surface damage occurs after the substrate treatment. But the common large area surface topography indicates the decreasing of roughness. In order to have purely physical etching the argon plasma was used. Thus this combination of methods allows determine optimal conditions of the substrate preparation.

Czech abstract

Článek popisuje proces přípravy substrátů safíru a karbidu křemíku. Zpracované substráty byly studovány pomocí interferometrie pro definování hloubky leptání, a mikroskopie atomárních sil pro studium topografie a statistický analýz drsnosti povrchu před a po leptání. Interferometrie ukazuje závislost leptání rychlostí na úhlu mezi substrátem a svazkem iontů argonu.

English abstract

The paper describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching and its characterization. The study confirms the possibility of using dry plasma etching processes for wide band gape materials treatment, since the condition of the substrate surface is an important parameter for electronic and optoelectronic devices manufacturing. Processed substrates were studied by interferometry to define the etch depth, and by atomic force microscopy to study the topography and statistical analysis of surface roughness before and after etching. The interferometry reveals the dependence of etch rate on the angle between the substrates and defocused beam of argon ions. It is also shown in low scale image that the surface damage occurs after the substrate treatment. But the common large area surface topography indicates the decreasing of roughness. In order to have purely physical etching the argon plasma was used. Thus this combination of methods allows determine optimal conditions of the substrate preparation.

Keywords

etching; sapphire; silicon carbide; substrate; interferometry; atomic force microscopy

RIV year

2014

Released

05.11.2014

Publisher

IEEE Computer Society Press

Location

Los Alamitos, CA, USA

ISBN

978-1-4799-6666-0

Book

2014 International Symposium on Optomechatronic Technologies (ISOT 2014)

Pages from

283

Pages to

287

Pages count

5

BibTex


@inproceedings{BUT110784,
  author="Dinara {Sobola} and Elena {Prokopyeva} and Pavel {Tománek} and Lubomír {Grmela} and Shihgasan {Ramazanov}",
  title="Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching",
  annote="The paper describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching and its characterization. The study confirms the possibility of using dry plasma etching processes for wide band gape materials treatment, since the condition of the substrate surface is an important parameter for electronic and optoelectronic devices manufacturing. Processed substrates were studied by interferometry to define the etch depth, and by atomic force microscopy to study the topography and statistical analysis of surface roughness before and after etching. The interferometry reveals the dependence of etch rate on the angle between the substrates and defocused beam of argon ions. It is also shown in low scale image that the surface damage occurs after the substrate treatment. But the common large area surface topography indicates the decreasing of roughness. In order to have purely physical etching the argon plasma was used. Thus this combination of methods allows determine optimal conditions of the substrate preparation.",
  address="IEEE Computer Society Press",
  booktitle="2014 International Symposium on Optomechatronic Technologies (ISOT 2014)",
  chapter="110784",
  doi="10.1109/ISOT.2014.76",
  howpublished="online",
  institution="IEEE Computer Society Press",
  number="1",
  year="2014",
  month="november",
  pages="283--287",
  publisher="IEEE Computer Society Press",
  type="conference paper"
}