Publication detail

AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

DALLAEVA, D. TALU, S. STACH, S. ŠKARVADA, P. TOMÁNEK, P. GRMELA, L.

Original Title

AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

Czech Title

AFM zobrazování a fraktální analýza drsnosti povrchu AlN na safírových substrátů

English Title

AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

Type

journal article

Language

en

Original Abstract

The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis).

Czech abstract

Příspěvek se zabývá AFM zobrazování a charakterizaci 3D povrchové morfologie nitridu hliníku na safírovém substrátu.

English abstract

The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis).

Keywords

Aluminum nitride; Epitaxy; Substrate; Surface roughness; Atomic force microscopy; Fractal analysis

RIV year

2014

Released

01.09.2014

Publisher

Elsevier

Pages from

81

Pages to

86

Pages count

6

BibTex


@article{BUT108712,
  author="Dinara {Sobola} and Stefan {Talu} and Sebastian {Stach} and Pavel {Škarvada} and Pavel {Tománek} and Lubomír {Grmela}",
  title="AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates",
  annote="The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis).",
  address="Elsevier",
  chapter="108712",
  doi="10.1016/j.apsusc.2014.05.086",
  institution="Elsevier",
  number="312",
  volume="312",
  year="2014",
  month="september",
  pages="81--86",
  publisher="Elsevier",
  type="journal article"
}