Publication detail

Photoconductivity of CdTe Semiconductor Radiation Detectors

ŠIK, O. GRMELA, L.

Original Title

Photoconductivity of CdTe Semiconductor Radiation Detectors

Czech Title

Fotovodivost polovodičových detektorů ionizujícího záření na bázi CdTe

English Title

Photoconductivity of CdTe Semiconductor Radiation Detectors

Type

journal article

Language

en

Original Abstract

This paper presents the results of experimental studies of transport and noise characteristics of CdTe deterctors. The current – voltage (I-V) characteristics and noise spectral densities were measured at the room temperature in dark and illumination through the contact area. We found that in this sample are good ohmic contacts and then measured noise corresponds volume noise sources only. The dominant noise source is 1/f type. One sample met the criteria to assumed bz the Hooge model. The Hooge constant for this sample was found: 5.5x10^-2. This value is higher than 2x10^-3 proposed by the Hooge theory due to the contact noise sources. Nevertheless, this value is very close to the theoretical.

Czech abstract

Článek popisuje výsledky studií transportních a šumových charakteristik detektorů CdTe. VA a PSD charakteristiky byly měřeny při pokkojové teplotě za tmy a při ozáření monochcromatickým světlem skrz kontakty. Bylo zjištěno, že u nízkoodporového vzorku je hlavním zdrojem šumu aktivní objem detektoru. Dominujícím typem šumu je šum 1/f. Dále bylo zjištěno, že konstanta hoogeova modelu jr vyšší než teoretická a to z důvodů aditivního šumu kontaktů.

English abstract

This paper presents the results of experimental studies of transport and noise characteristics of CdTe deterctors. The current – voltage (I-V) characteristics and noise spectral densities were measured at the room temperature in dark and illumination through the contact area. We found that in this sample are good ohmic contacts and then measured noise corresponds volume noise sources only. The dominant noise source is 1/f type. One sample met the criteria to assumed bz the Hooge model. The Hooge constant for this sample was found: 5.5x10^-2. This value is higher than 2x10^-3 proposed by the Hooge theory due to the contact noise sources. Nevertheless, this value is very close to the theoretical.

Keywords

CdTe, noise, reliability

RIV year

2013

Released

16.11.2013

Publisher

International Scientific Academy of Engineering & Technology

Location

India

Pages from

31

Pages to

34

Pages count

4

BibTex


@article{BUT103625,
  author="Ondřej {Šik} and Lubomír {Grmela}",
  title="Photoconductivity of CdTe Semiconductor Radiation Detectors",
  annote="This paper presents the results of experimental studies of transport and noise characteristics of CdTe deterctors. The current – voltage (I-V) characteristics and noise spectral densities were measured at the room temperature in dark and illumination through the contact area. We found that in this sample are good ohmic contacts and then measured noise corresponds volume noise sources only. The dominant noise source is 1/f type. One sample met the criteria to assumed bz the Hooge model. The Hooge constant for this sample was found:  5.5x10^-2. This value is higher than  2x10^-3 proposed by the Hooge theory due to the contact noise sources. Nevertheless, this value is very close to the theoretical.",
  address="International Scientific Academy of Engineering & Technology",
  chapter="103625",
  institution="International Scientific Academy of Engineering & Technology",
  number="5",
  volume="1",
  year="2013",
  month="november",
  pages="31--34",
  publisher="International Scientific Academy of Engineering & Technology",
  type="journal article"
}