Publication detail

AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate

DALLAEVA, D. TALU, S. STACH, S. ŠKARVADA, P. TOMÁNEK, P. TALU, M. GRMELA, L.

Original Title

AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate

Czech Title

AFM zobrazování a fraktální analýza povrchové drsnosti AlN epivrstev nanesených na safírovou podložku

English Title

AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate

Type

conference paper

Language

en

Original Abstract

Aluminum nitride (AlN) is a direct wide band gap semiconductor which attracts much attention due to wide range of application and its unique properties. AlN thin films were obtained by magnetron sputtering of aluminum target. The quality of AlN surface topography plays important role in various optoelectronic devices. To understand how the effect of temperature changes the epilayers surface, the surface topography is characterized through atomic force microscopy (AFM) and fractal analysis.

Czech abstract

Nitrát hliníku (AlN) is je přímý polovodič s širokým zakázaným pásem, který se, díky svým vlastnostem, jeví velmi vhodným pro rrůzné aplikace. Tenké vrstvy AlN byly získány magnetickým naprašováním z hliníkového terče. Kvalita povrchu AlN je rozhodujícím faktorem v optoelektronických součástkách. Pro pochopení termálních změn povrchové vrsty jsou použity AFM a fraktální analýza.

English abstract

Aluminum nitride (AlN) is a direct wide band gap semiconductor which attracts much attention due to wide range of application and its unique properties. AlN thin films were obtained by magnetron sputtering of aluminum target. The quality of AlN surface topography plays important role in various optoelectronic devices. To understand how the effect of temperature changes the epilayers surface, the surface topography is characterized through atomic force microscopy (AFM) and fractal analysis.

Keywords

AlN epilayer, saphire, roughness, AFM, fractal analysis, measurement

RIV year

2013

Released

25.11.2013

Publisher

Comenius University

Location

Bratislava

ISBN

978-80-223-3501-0

Book

Proceedings of 8th Solid State Surfaces and Interfaces

Pages from

33

Pages to

34

Pages count

2

BibTex


@inproceedings{BUT103194,
  author="Dinara {Sobola} and Stefan {Talu} and Sebastian {Stach} and Pavel {Škarvada} and Pavel {Tománek} and Mihai {Talu} and Lubomír {Grmela}",
  title="AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate",
  annote="Aluminum nitride (AlN) is a direct wide band gap semiconductor which attracts much attention due to wide range of application and its unique properties. AlN thin films were obtained by magnetron sputtering of aluminum target.  The quality of AlN surface topography plays important role in various optoelectronic devices. To understand how the effect of temperature changes the epilayers surface, the surface topography is characterized through atomic force microscopy (AFM) and fractal analysis.",
  address="Comenius University",
  booktitle="Proceedings of 8th Solid State Surfaces and Interfaces",
  chapter="103194",
  howpublished="print",
  institution="Comenius University",
  year="2013",
  month="november",
  pages="33--34",
  publisher="Comenius University",
  type="conference paper"
}