Publication detail

Effect of High Operating Temperature on Electrcal Quantities of CdTe Radiation Detectors

ŠIK, O. TRČKA, T. GRMELA, L. VONDRA, M.

Original Title

Effect of High Operating Temperature on Electrcal Quantities of CdTe Radiation Detectors

Czech Title

Effect of High Operating Temperature on Electrcal Quantities of CdTe Radiation Detectors

English Title

Effect of High Operating Temperature on Electrcal Quantities of CdTe Radiation Detectors

Type

journal article

Language

cs

Original Abstract

Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing.

Czech abstract

Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing.

English abstract

Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100 C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing.

Keywords

CdTe, šum, spolehlivost

RIV year

2013

Released

10.01.2013

Publisher

Universal Association of Computer and Electronics Engineers

Location

113 Barksdale Professional CTR, Newark, New Castle County, DE, United States of America

Pages from

60

Pages to

63

Pages count

4

BibTex


@article{BUT101977,
  author="Ondřej {Šik} and Tomáš {Trčka} and Lubomír {Grmela} and Marek {Vondra}",
  title="Effect of High Operating Temperature on Electrcal Quantities of CdTe Radiation Detectors",
  annote="Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing.",
  address="Universal Association of Computer and Electronics Engineers",
  chapter="101977",
  howpublished="online",
  institution="Universal Association of Computer and Electronics Engineers",
  number="1",
  volume="3",
  year="2013",
  month="january",
  pages="60--63",
  publisher="Universal Association of Computer and Electronics Engineers",
  type="journal article"
}