Publication detail

High Performance Wideband CMOS CCI with High Voltage Swing

ARSLAN, E. METIN, B. HERENCSÁR, N. KOTON, J. CICEKOGLU, O.

Original Title

High Performance Wideband CMOS CCI with High Voltage Swing

English Title

High Performance Wideband CMOS CCI with High Voltage Swing

Type

abstract

Language

en

Original Abstract

In this study, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has very low equivalent impedance on port X. It also has high voltage swings on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. It is shown that the simulation results are in very good agreement with the expected ones.

English abstract

In this study, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has very low equivalent impedance on port X. It also has high voltage swings on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. It is shown that the simulation results are in very good agreement with the expected ones.

Keywords

CCI, first generation current conveyor, low-voltage.

Released

17.05.2012

Location

Suceava

ISBN

1844-5020

Book

Abstracts Book of the 11th International Conference on Development and Application Systems (DAS 2012)

Pages from

24

Pages to

24

Pages count

1

Documents

BibTex


@misc{BUT95298,
  author="Emre {Arslan} and Bilgin {Metin} and Norbert {Herencsár} and Jaroslav {Koton} and Oguzhan {Cicekoglu}",
  title="High Performance Wideband CMOS CCI with High Voltage Swing",
  annote="In this study, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has very low equivalent impedance on port X. It also has high voltage swings on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. It is shown that the simulation results are in very good agreement with the expected ones.",
  booktitle="Abstracts Book of the 11th International Conference on Development and Application Systems (DAS 2012)",
  chapter="95298",
  year="2012",
  month="may",
  pages="24--24",
  type="abstract"
}