Publication detail
High Performance Wideband CMOS CCI with High Voltage Swing
ARSLAN, E. METIN, B. HERENCSÁR, N. KOTON, J. CICEKOGLU, O.
Original Title
High Performance Wideband CMOS CCI with High Voltage Swing
English Title
High Performance Wideband CMOS CCI with High Voltage Swing
Type
conference paper
Language
en
Original Abstract
In this study, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has very low equivalent impedance on port X. It also has high voltage swings on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. It is shown that the simulation results are in very good agreement with the expected ones.
English abstract
In this study, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has very low equivalent impedance on port X. It also has high voltage swings on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. It is shown that the simulation results are in very good agreement with the expected ones.
Keywords
CCI, first generation current conveyor, low-voltage.
RIV year
2012
Released
17.05.2012
Location
Suceava
ISBN
978-606-571-815-9
Book
Proceedings of the 11th International Conference on Development and Application Systems (DAS 2012)
Pages from
107
Pages to
110
Pages count
4
Documents
BibTex
@inproceedings{BUT95297,
author="Emre {Arslan} and Bilgin {Metin} and Norbert {Herencsár} and Jaroslav {Koton} and Oguzhan {Cicekoglu}",
title="High Performance Wideband CMOS CCI with High Voltage Swing",
annote="In this study, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has very low equivalent impedance on port X. It also has high voltage swings on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. It is shown that the simulation results are in very good agreement with the expected ones.",
booktitle="Proceedings of the 11th International Conference on Development and Application Systems (DAS 2012)",
chapter="95297",
howpublished="electronic, physical medium",
year="2012",
month="may",
pages="107--110",
type="conference paper"
}