Publication detail

Parasitic Effects in Battery Charger Using New SiC Diodes

KUZDAS, J. VOREL, P.

Original Title

Parasitic Effects in Battery Charger Using New SiC Diodes

English Title

Parasitic Effects in Battery Charger Using New SiC Diodes

Type

conference paper

Language

en

Original Abstract

This article deals with a parasitic effects in highpower charger for electric vehicles. Because of the required minimum possible size and weight,while keeping the simplicity and reliability of the equipment, it was not easy to choose an appropriate design. It was used semiconductors on based SiC and switching frequency 100kHz. Due to the high switching frequency it was necessary to eliminate some parasitic effects occurring. This converter was implemented as a functional pattern, and then measurements were taken to verify the validation and functionality of the equipment.

English abstract

This article deals with a parasitic effects in highpower charger for electric vehicles. Because of the required minimum possible size and weight,while keeping the simplicity and reliability of the equipment, it was not easy to choose an appropriate design. It was used semiconductors on based SiC and switching frequency 100kHz. Due to the high switching frequency it was necessary to eliminate some parasitic effects occurring. This converter was implemented as a functional pattern, and then measurements were taken to verify the validation and functionality of the equipment.

Keywords

SiC diode, Cool-MOS transistor, high-power charger, switching frequency.

RIV year

2012

Released

15.10.2012

ISBN

978-80-214-4602-1

Book

XII. International Conference on Low Voltage Electrical Machines 2012

Edition

1

Edition number

1

Pages from

110

Pages to

112

Pages count

3

BibTex


@inproceedings{BUT95141,
  author="Jan {Kuzdas} and Pavel {Vorel}",
  title="Parasitic Effects in Battery Charger Using New SiC Diodes",
  annote="This article deals with a parasitic effects in highpower charger for electric vehicles. Because of the required minimum possible size and weight,while keeping the simplicity and reliability of the equipment, it was not easy to choose an appropriate design. It was used semiconductors on based SiC and switching frequency 100kHz. Due to the high switching frequency it was necessary to eliminate some parasitic effects occurring. This converter was implemented as a functional pattern, and then measurements were taken to verify the validation and functionality of the equipment.",
  booktitle="XII. International Conference on Low Voltage Electrical Machines 2012",
  chapter="95141",
  edition="1",
  howpublished="electronic, physical medium",
  year="2012",
  month="october",
  pages="110--112",
  type="conference paper"
}