Publication detail

Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy

DALLAEVA, D. TOMÁNEK, P. BILALOV, B.

Original Title

Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy

Type

conference paper

Language

English

Original Abstract

The purpose of the study is formation and investigation of SiC/(SiC)1-x(AlN)x structure by scanning electron microscopy and atomic force microscopy. Sublimation epitaxy of the policrystalline sourse of (SiC)1-x(AlN)x was used. The optimal conditions of sublimation process are defined. These structures could be used as substrate for desing of semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, it also can be uses for production of transistors with high mobility of electrons and also for creation of blue and ultraviolet lith emmiters, in light-emmited diodes and laser diodes.

Keywords

compostion, morphology, temperature, sublimation

Authors

DALLAEVA, D.; TOMÁNEK, P.; BILALOV, B.

RIV year

2012

Released

16. 10. 2012

Publisher

Institute of Plasma Physics AS CR, v.v.i. - TOPTEC

Location

Prague 8

ISBN

978-80-87026-02-1

Book

Optics and Measurement 2012

Edition

first edition

Edition number

16.10.2012

Pages from

5

Pages to

8

Pages count

4

BibTex

@inproceedings{BUT94655,
  author="Dinara {Sobola} and Pavel {Tománek} and Bilal {Bilalov}",
  title="Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy",
  booktitle="Optics and Measurement 2012",
  year="2012",
  series="first edition",
  number="16.10.2012",
  pages="5--8",
  publisher="Institute of Plasma Physics AS CR, v.v.i. - TOPTEC",
  address="Prague 8",
  isbn="978-80-87026-02-1"
}