RTS in Quantum Dots: Experimental Set-up with Long-tim Stability and Magnetic Fields Compensation

conference paper

English

Quantum dot (QD) structures have attracted much attention becuase of interest in not only the relevance of low-dimensional electron gas physics but alo future applications of high-density, low power, and highly functional integrated circuits. It is assumed that the RTS noise is induced by a primary process X3(t) which is represented by a charge carrier quantum transitions between trap energy level and conduction or valecne bands. The primary process X3(t) is in general a three state g - r process. A secondary process Y(t) is represented by the current modulation. It has two discrete states (\alpha, \beta). An this case two states of the X3(t) process are transformed into one state of the measurable secondary Y(t) process. The probability density of the occupation times in the \alpha state depends on electron emission constant from trap to conduction band. For \beta state we have superposition of two exponential dependeces. First is given by a capture of electron form conduction band on the trap and second one is given by emission of hole or capture of electron from conduction band on the trap. It is possible to distinguish experimetally between the two or three state primary processes by measurements of the probability density and dispersion time in the \beta state. These long time measuerements need to use very stable power source and active shielding of low frequency magnetic field.

noise, nonlinearity, nanoscale devices

ŠIKULA, J., PAVELKA, J., TACANO, M., HASHIGUCHI, S.

2003

1. 1. 2003

Kluwer

USA

1-4020-2169-0

Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices.

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