Publication detail

Morphology and structural investigation of silicon carbide layers formated by sublimation

DALLAEVA, D.

Original Title

Morphology and structural investigation of silicon carbide layers formated by sublimation

Type

conference paper

Language

English

Original Abstract

Thin films of silicon carbide (SiC) were grown by sublimation epitaxy in vacuum on the 6H-SiC substrates. Structural properties of the initial substrates and the epilayers were studied by both electron-diffraction and X-ray diffraction methods. Electron-diffraction measurement gives the confirmation of the crystallinity of obtained layers. Experimental results show that a lattice per-fection of epilayer is equal to that of monocrystalline substrate. These results are also validated by scanning probe microscopy. So, this technology of fabrication of SiC thin films allows carry out a treatment of initial substrate defects in dependence of the process conditions.

Keywords

structural properties, lattice perfection, epilayer, substrate, epitaxy

Authors

DALLAEVA, D.

RIV year

2012

Released

26. 4. 2012

Publisher

LITERA Brno, Tabor 43a, 612 00 Brno

Location

Brno

ISBN

978-80-214-4462-1

Book

Proceedings of the 18th Conference STUDENT EEICT, vol. 3

Edition

vol.3

Pages from

239

Pages to

243

Pages count

5

BibTex

@inproceedings{BUT91751,
  author="Dinara {Sobola}",
  title="Morphology and structural investigation of silicon carbide layers formated by sublimation",
  booktitle="Proceedings of the 18th Conference STUDENT EEICT, vol. 3",
  year="2012",
  series="vol.3",
  pages="239--243",
  publisher="LITERA Brno, Tabor 43a, 612 00 Brno",
  address="Brno",
  isbn="978-80-214-4462-1"
}