Publication detail

Novel Floating General Element Simulators Using CBTA

AYTEN, U. SAGBAS, M. HERENCSÁR, N. KOTON, J.

Original Title

Novel Floating General Element Simulators Using CBTA

English Title

Novel Floating General Element Simulators Using CBTA

Type

journal article in Web of Science

Language

en

Original Abstract

In this study, a novel floating frequency dependent negative resistor (FDNR), floating inductor, floating capacitor and floating resistor simulator circuit employing two CBTAs and three passive components is proposed. The presented circuit can realize floating FDNR, inductor, capacitor or resistor depending on the passive component selection. Since the passive elements are all grounded, this circuit is suitable for fully integrated circuit design. The circuit does not require any component matching conditions, and it has a good sensitivity performance with respect to tracking errors. Moreover, the proposed FDNR, inductance, capacitor and resistor simulator can be tuned electronically by changing the biasing current of the CBTA or can be controlled through the grounded resistor or capacitor. The high-order frequency dependent element simulator circuit is also presented. Depending on the passive component selection, it realizes high-order floating circuit defining as V(s) = snAI(s) or V(s) = s-nBI(s). The proposed floating FDNR simulator circuit and floating high-order frequency dependent element simulator circuit are demonstrated by using SPICE simulation for 0.25 um, level 7, TSMC CMOS technology parameters.

English abstract

In this study, a novel floating frequency dependent negative resistor (FDNR), floating inductor, floating capacitor and floating resistor simulator circuit employing two CBTAs and three passive components is proposed. The presented circuit can realize floating FDNR, inductor, capacitor or resistor depending on the passive component selection. Since the passive elements are all grounded, this circuit is suitable for fully integrated circuit design. The circuit does not require any component matching conditions, and it has a good sensitivity performance with respect to tracking errors. Moreover, the proposed FDNR, inductance, capacitor and resistor simulator can be tuned electronically by changing the biasing current of the CBTA or can be controlled through the grounded resistor or capacitor. The high-order frequency dependent element simulator circuit is also presented. Depending on the passive component selection, it realizes high-order floating circuit defining as V(s) = snAI(s) or V(s) = s-nBI(s). The proposed floating FDNR simulator circuit and floating high-order frequency dependent element simulator circuit are demonstrated by using SPICE simulation for 0.25 um, level 7, TSMC CMOS technology parameters.

Keywords

Frequency dependent negative resistor (FDNR), floating inductor, capacitance multiplier, floating element simulator circuit, current backward transconductance amplifier (CBTA), active networks

RIV year

2012

Released

02.04.2012

ISBN

1210-2512

Periodical

Radioengineering

Year of study

21

Number

1

State

CZ

Pages from

11

Pages to

19

Pages count

9

Documents

BibTex


@article{BUT91544,
  author="Umut E. {Ayten} and Mehmet {Sagbas} and Norbert {Herencsár} and Jaroslav {Koton}",
  title="Novel Floating General Element Simulators Using CBTA",
  annote="In this study, a novel floating frequency dependent negative resistor (FDNR), floating inductor, floating capacitor and floating resistor simulator circuit employing two CBTAs and three passive components is proposed. The presented circuit can realize floating FDNR, inductor, capacitor or resistor depending on the passive component selection. Since the passive elements are all grounded, this circuit is suitable for fully integrated circuit design. The circuit does not require any component matching conditions, and it has a good sensitivity performance with respect to tracking errors. Moreover, the proposed FDNR, inductance, capacitor and resistor simulator can be tuned electronically by changing the biasing current of the CBTA or can be controlled through the grounded resistor or capacitor. The high-order frequency dependent element simulator circuit is also presented. Depending on the passive component selection, it realizes high-order floating circuit defining as V(s) = snAI(s) or V(s) = s-nBI(s). The proposed floating FDNR simulator circuit and floating high-order frequency dependent element simulator circuit are demonstrated by using SPICE simulation for 0.25 um, level 7, TSMC CMOS technology parameters.",
  chapter="91544",
  number="1",
  volume="21",
  year="2012",
  month="april",
  pages="11--19",
  type="journal article in Web of Science"
}