Publication detail

1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes

TOMÁNEK, P., DOBIS, P., GRMELA, L.

Original Title

1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes

Type

conference paper

Language

English

Original Abstract

Semiconductor light emitting diodes (LEDs) and lasers based on self-organized quantum dots (QD) are very promising emitters with an enhanced radiation hardness. However, this promising feature is devaluated by the large dispersion in size, shape and stoichiometric composition of self-organized quantum dots and surrounding material. The experimental results of LF noise investigation of LEDs based on InAs quantum dots, LEDs based on InAs quantum dots with additional In0.2Ga0.8As quantum well (QW), laser diodes based on In0.2Ga0.8As quantum wells are presented in this work.

Keywords

noise, quantum dots, quantum well, laser diode, LED

Authors

TOMÁNEK, P., DOBIS, P., GRMELA, L.

RIV year

2003

Released

16. 10. 2003

Publisher

MtF STU Trnava

Location

Bratislava

ISBN

80-277-1949-8

Book

CO-MAT-TECH 2003, 11th International scientific conference

Pages from

1063

Pages to

1066

Pages count

4

BibTex

@inproceedings{BUT8334,
  author="Pavel {Tománek} and Pavel {Dobis} and Lubomír {Grmela}",
  title="1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes",
  booktitle="CO-MAT-TECH 2003, 11th International scientific conference",
  year="2003",
  pages="4",
  publisher="MtF STU Trnava",
  address="Bratislava",
  isbn="80-277-1949-8"
}