Publication detail

Fourier Analysis of Memristor Excited by Sinusoidal Signal

BIOLKOVÁ, V. BIOLEK, D. KOLKA, Z.

Original Title

Fourier Analysis of Memristor Excited by Sinusoidal Signal

English Title

Fourier Analysis of Memristor Excited by Sinusoidal Signal

Type

conference paper

Language

en

Original Abstract

The paper deals with the analysis of flux-controlled memristor which is described by its unambiguous charge-flux constitutive relation. The memristor is excited by ideal sinusoidal voltage source in order to sense its typical i-v pinched hysteretic loop. Two equivalent schematics of the transformation of the exciting voltage into the current response are described. The first one is used for the spectral analysis of the current. It is shown that the corresponding Fourier series contains only the sine terms. It confirms the fact that the pinched hysteretic loops of ideal memristors must be always odd-symmetrical.

English abstract

The paper deals with the analysis of flux-controlled memristor which is described by its unambiguous charge-flux constitutive relation. The memristor is excited by ideal sinusoidal voltage source in order to sense its typical i-v pinched hysteretic loop. Two equivalent schematics of the transformation of the exciting voltage into the current response are described. The first one is used for the spectral analysis of the current. It is shown that the corresponding Fourier series contains only the sine terms. It confirms the fact that the pinched hysteretic loops of ideal memristors must be always odd-symmetrical.

Keywords

memristor, constitutive relation, pinched hysteretic loop, spectral analysis, charge, flux

RIV year

2011

Released

10.11.2011

Publisher

IEEEAM

Location

Tenerife, Spain

ISBN

978-1-61804-055-8

Book

MATHEMATICAL MODELS FOR ENGINEERING SCIENCE (MMES)

Pages from

154

Pages to

159

Pages count

6

BibTex


@inproceedings{BUT74673,
  author="Viera {Biolková} and Dalibor {Biolek} and Zdeněk {Kolka}",
  title="Fourier Analysis of Memristor Excited by Sinusoidal Signal",
  annote="The paper deals with the analysis of flux-controlled memristor which is described by its unambiguous charge-flux constitutive relation. The memristor is excited by ideal sinusoidal voltage source in order to sense its typical i-v pinched hysteretic loop. Two equivalent schematics of the transformation of the exciting voltage into the current response are described. The first one is used for the spectral analysis of the current. It is shown that the corresponding Fourier series contains only the sine terms. It confirms the fact that the pinched hysteretic loops of ideal memristors must be always odd-symmetrical.",
  address="IEEEAM",
  booktitle="MATHEMATICAL MODELS FOR ENGINEERING SCIENCE (MMES)",
  chapter="74673",
  howpublished="electronic, physical medium",
  institution="IEEEAM",
  year="2011",
  month="november",
  pages="154--159",
  publisher="IEEEAM",
  type="conference paper"
}