Publication detail

Near-field optical imaging of carrier dynamics in silicon with superresolution

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., OTEVŘELOVÁ, D., GRMELA, L., KAWATA, S.

Original Title

Near-field optical imaging of carrier dynamics in silicon with superresolution

Type

conference paper

Language

English

Original Abstract

The lifetime of excess carriers created by illumination of a semiconductor with a visible light is modified by the presence of defects, which may occur under or in the surface. The system detects the excess carries with an infrared (IR) light. Due to the free carrier absorption as a dominant carrier interaction for used IR wavelength, the IR signal is decreased by the presence of excess carriers. The time-dependence of the IR signal variation is characteristic of the excess carrier lifetime. Characteristic rate variations of carrier processes in silicon are imaged using near field scanning optical microscopy (NSOM) with high (<100 nm) spatial resolution. Moreover, the images can locate defects, reveal variations, and map the regions in which a recombination process is active.

Keywords

near-field optics, optical imaging, superresolution, semiconductor, silicon, lifetime, carrier dynamics

Authors

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., OTEVŘELOVÁ, D., GRMELA, L., KAWATA, S.

RIV year

2003

Released

2. 3. 2003

Publisher

Institute for Physics of microstructures RAS

Location

Nizhniy Novgorod, Russia

Pages from

63

Pages to

65

Pages count

3

BibTex

@inproceedings{BUT7380,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Dana {Otevřelová} and Lubomír {Grmela} and Satoshi {Kawata}",
  title="Near-field optical imaging of carrier dynamics in silicon with superresolution",
  booktitle="Scanning Probe Microscopy - 2003",
  year="2003",
  pages="63--65",
  publisher="Institute for Physics of microstructures RAS",
  address="Nizhniy Novgorod, Russia"
}