Publication detail

Contribution to modeling of stressing in microelectronic structures

PULEC, J. SZENDIUCH, I.

Original Title

Contribution to modeling of stressing in microelectronic structures

English Title

Contribution to modeling of stressing in microelectronic structures

Type

abstract

Language

en

Original Abstract

Topic of my article is modeling of thermomechanical stressing in modern microelectronic structures. Simulations are made using software ANSYS, which is based on Finite Element Method (FEM). Using this method, thermomechanical stressing in various structures was modeled. After simulations, data evaluation and comparison of yielded results was made to determine amplitudes and differences between stressing in various regions of modeled structure and between individual structures.

English abstract

Topic of my article is modeling of thermomechanical stressing in modern microelectronic structures. Simulations are made using software ANSYS, which is based on Finite Element Method (FEM). Using this method, thermomechanical stressing in various structures was modeled. After simulations, data evaluation and comparison of yielded results was made to determine amplitudes and differences between stressing in various regions of modeled structure and between individual structures.

Keywords

ANSYS, Stressing, 3D Structures

Released

12.05.2010

Publisher

Oficyna Wydawnicza Politechniki Warszawskiej

Location

Warsaw, Poland

ISBN

978-83-7207-870-4

Book

Abstract proceedings. Polymer Electronics and Nanotechnologies: towards System Integration.

Edition number

1

Pages from

218

Pages to

219

Pages count

2

BibTex


@misc{BUT61078,
  author="Jiří {Pulec} and Ivan {Szendiuch}",
  title="Contribution to modeling of stressing in microelectronic structures",
  annote="Topic of my article is modeling of thermomechanical stressing in modern microelectronic structures. Simulations are made using software ANSYS, which is based on Finite Element Method (FEM). Using this method, thermomechanical stressing in various structures was modeled. After simulations, data evaluation and comparison of yielded results was made to determine amplitudes and differences between stressing in various regions of modeled structure and between individual structures.",
  address="Oficyna Wydawnicza Politechniki Warszawskiej",
  booktitle="Abstract proceedings. Polymer Electronics and Nanotechnologies: towards System Integration.",
  chapter="61078",
  institution="Oficyna Wydawnicza Politechniki Warszawskiej",
  year="2010",
  month="may",
  pages="218--219",
  publisher="Oficyna Wydawnicza Politechniki Warszawskiej",
  type="abstract"
}