Publication detail

1/f noise models and low-frequency noise characteristics of InAlAs/InGaAs devices

PAVELKA, J. TACANO, M. TANUMA, N. ŠIKULA, J.

Original Title

1/f noise models and low-frequency noise characteristics of InAlAs/InGaAs devices

English Title

1/f noise models and low-frequency noise characteristics of InAlAs/InGaAs devices

Type

abstract

Language

en

Original Abstract

Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1-xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experi-mental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes.

English abstract

Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1-xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experi-mental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes.

Keywords

1/f noise, g-r noise, InGaAs, compound semiconductors

Released

31.05.2010

Publisher

ISCS

Location

Takamatsu, Japonsko

Pages from

25

Pages to

25

Pages count

1

BibTex


@misc{BUT61010,
  author="Jan {Pavelka} and Munecazu {Tacano} and Nobuhisa {Tanuma} and Josef {Šikula}",
  title="1/f noise models and low-frequency noise characteristics of InAlAs/InGaAs devices",
  annote="Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1-xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experi-mental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes.",
  address="ISCS",
  booktitle="The 37th International Symposium on Compound Semiconductors (ISCS 2010)",
  chapter="61010",
  institution="ISCS",
  year="2010",
  month="may",
  pages="25--25",
  publisher="ISCS",
  type="abstract"
}