Publication detail

Transistor Models Paramter Extraction

RECMAN, M.

Original Title

Transistor Models Paramter Extraction

Type

conference paper

Language

English

Original Abstract

Direct extraction methods are believed to be far from providing the accuracy an optimized-based extraction is capable of producing. On the other hand optimization-based extraction generates models leaving physical meaning of their parameters. To generate both accurate and physical models much effort is needed in developing direct and optimization-based extraction methods. The paper reviews the fudamental problems connected with these methods and brings the example of extractor generating optimized physically correct transistor models.

Keywords

transistor models, parameter extraction,

Authors

RECMAN, M.

RIV year

2002

Released

1. 1. 2002

Publisher

Ing. Z. Novotný, Brno 2002

Location

Brno

ISBN

80-214-2217-3

Book

Socrates Workshop 2002 - Proceedings. Intensive Training Programme in Electronic System Design

Pages from

103

Pages to

106

Pages count

4

BibTex

@inproceedings{BUT5523,
  author="Milan {Recman}",
  title="Transistor Models Paramter Extraction",
  booktitle="Socrates Workshop 2002 - Proceedings. Intensive Training Programme in Electronic System Design",
  year="2002",
  pages="4",
  publisher="Ing. Z. Novotný, Brno
2002",
  address="Brno
",
  isbn="80-214-2217-3"
}