Publication detail

1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices

PAVELKA, J. TACANO, M. TANUMA, N. ŠIKULA, J.

Original Title

1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices

Type

journal article - other

Language

English

Original Abstract

Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1-xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experi-mental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes.

Keywords

1/f noise, g-r noise, InGaAs, compound semiconductors

Authors

PAVELKA, J.; TACANO, M.; TANUMA, N.; ŠIKULA, J.

RIV year

2011

Released

14. 2. 2011

Publisher

Wiley

Location

Weinheim

ISBN

1610-1642

Periodical

Physica Status Solidi C

Year of study

8

Number

2

State

Federal Republic of Germany

Pages from

303

Pages to

305

Pages count

3

BibTex

@article{BUT50236,
  author="Jan {Pavelka} and Munecazu {Tacano} and Nobuhisa {Tanuma} and Josef {Šikula}",
  title="1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices",
  journal="Physica Status Solidi C",
  year="2011",
  volume="8",
  number="2",
  pages="303--305",
  issn="1610-1642"
}