Publication detail

1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices

PAVELKA, J. TACANO, M. TANUMA, N. ŠIKULA, J.

Original Title

1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices

English Title

1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices

Type

journal article

Language

en

Original Abstract

Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1-xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experi-mental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes.

English abstract

Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1-xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experi-mental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes.

Keywords

1/f noise, g-r noise, InGaAs, compound semiconductors

RIV year

2011

Released

14.02.2011

Publisher

Wiley

Location

Weinheim

Pages from

303

Pages to

305

Pages count

3

BibTex


@article{BUT50236,
  author="Jan {Pavelka} and Munecazu {Tacano} and Nobuhisa {Tanuma} and Josef {Šikula}",
  title="1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices",
  annote="Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1-xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experi-mental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes.",
  address="Wiley",
  chapter="50236",
  institution="Wiley",
  journal="Physica Status Solidi C",
  number="2",
  volume="8",
  year="2011",
  month="february",
  pages="303--305",
  publisher="Wiley",
  type="journal article"
}