Publication detail

Accumulation Mode MOS Structure Usage in the Analog Design

MACHÁŇ, L. ŠTEFFAN, P.

Original Title

Accumulation Mode MOS Structure Usage in the Analog Design

English Title

Accumulation Mode MOS Structure Usage in the Analog Design

Type

journal article - other

Language

en

Original Abstract

This article introduce theoretical base for accumulation mode MOS structure usage as capacitor in the design of mixed-mode ASIC circuits. The usage of these structures allows using a pure digital CMOS technology for analog blocks design. The main advantage is low fabrication cost and compatibility with digital process option. The main disadvantage is non-linear capacity dependence on applied voltage that must be compensated.

English abstract

This article introduce theoretical base for accumulation mode MOS structure usage as capacitor in the design of mixed-mode ASIC circuits. The usage of these structures allows using a pure digital CMOS technology for analog blocks design. The main advantage is low fabrication cost and compatibility with digital process option. The main disadvantage is non-linear capacity dependence on applied voltage that must be compensated.

Keywords

MOS, CMOS, ASIC, VLSI, I3T/80

RIV year

2010

Released

22.09.2010

Publisher

Faculty of Electronic Engineering and Technologies, Technical University of Sofia

Location

Sofia, Bulgaria

ISBN

1313-1842

Periodical

Electronics

Year of study

4

Number

1

State

BG

Pages from

30

Pages to

32

Pages count

3

Documents

BibTex 


@article{BUT50212,
  author="Ladislav {Macháň} and Pavel {Šteffan}",
  title="Accumulation Mode MOS Structure Usage in the Analog Design",
  annote="This article introduce theoretical base for accumulation mode MOS structure usage as capacitor in the design of mixed-mode ASIC circuits. The usage of these structures allows using a pure digital CMOS technology for analog blocks design. The main advantage is low fabrication cost and compatibility with digital process option. The main disadvantage is non-linear capacity dependence on applied voltage that must be compensated.",
  address="Faculty of Electronic Engineering and Technologies, Technical University of Sofia",
  chapter="50212",
  institution="Faculty of Electronic Engineering and Technologies, Technical University of Sofia",
  journal="Electronics",
  number="1",
  volume="4",
  year="2010",
  month="september",
  pages="30--32",
  publisher="Faculty of Electronic Engineering and Technologies, Technical University of Sofia",
  type="journal article - other"
}