Publication detail

Variable Lateral Silicon Controlled Rectifier as an ESD Protection

BĚŤÁK, P. MUSIL, V.

Original Title

Variable Lateral Silicon Controlled Rectifier as an ESD Protection

Type

journal article - other

Language

English

Original Abstract

The Variable lateral Silicon Controlled Rectifier (VLSCR) is a SCR based structure with the possibility to tune I-V snapback characteristics. This effect is important for an ESD (electrostatic discharge) protection design. The ESD protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a gate-grounded NMOS transistor [3] or a SCR [3]. This text is dealing with the VLSCR structure which enables I-V snap-back characteristics tuning according to the application demand. Simulated technology was CMOS very high voltage (VHV Integrated Circuits). Measurement was done in BiCMOS process.

Keywords

VLSCR, SCR ,ESD

Authors

BĚŤÁK, P.; MUSIL, V.

RIV year

2008

Released

1. 8. 2008

ISBN

1109-9445

Periodical

WSEAS Transactions on Electronics

Year of study

5

Number

8

State

United States of America

Pages from

350

Pages to

359

Pages count

10

BibTex

@article{BUT49442,
  author="Petr {Běťák} and Vladislav {Musil}",
  title="Variable Lateral Silicon Controlled Rectifier as an ESD Protection",
  journal="WSEAS Transactions on Electronics",
  year="2008",
  volume="5",
  number="8",
  pages="350--359",
  issn="1109-9445"
}