Publication detail

Variable Lateral Silicon Controlled Rectifier as an ESD Protection

BĚŤÁK, P. MUSIL, V.

Original Title

Variable Lateral Silicon Controlled Rectifier as an ESD Protection

English Title

Variable Lateral Silicon Controlled Rectifier as an ESD Protection

Type

journal article

Language

en

Original Abstract

The Variable lateral Silicon Controlled Rectifier (VLSCR) is a SCR based structure with the possibility to tune I-V snapback characteristics. This effect is important for an ESD (electrostatic discharge) protection design. The ESD protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a gate-grounded NMOS transistor [3] or a SCR [3]. This text is dealing with the VLSCR structure which enables I-V snap-back characteristics tuning according to the application demand. Simulated technology was CMOS very high voltage (VHV Integrated Circuits). Measurement was done in BiCMOS process.

English abstract

The Variable lateral Silicon Controlled Rectifier (VLSCR) is a SCR based structure with the possibility to tune I-V snapback characteristics. This effect is important for an ESD (electrostatic discharge) protection design. The ESD protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a gate-grounded NMOS transistor [3] or a SCR [3]. This text is dealing with the VLSCR structure which enables I-V snap-back characteristics tuning according to the application demand. Simulated technology was CMOS very high voltage (VHV Integrated Circuits). Measurement was done in BiCMOS process.

Keywords

VLSCR, SCR ,ESD

RIV year

2008

Released

01.08.2008

Pages from

350

Pages to

359

Pages count

10

BibTex


@article{BUT49442,
  author="Petr {Běťák} and Vladislav {Musil}",
  title="Variable Lateral Silicon Controlled Rectifier as an ESD Protection",
  annote="The Variable lateral Silicon Controlled Rectifier (VLSCR) is a SCR based structure with the possibility to tune I-V snapback characteristics. This effect is important for an ESD (electrostatic discharge) protection design. The ESD protection structures act as a protection of integrated circuits against parasitic electrostatic discharge. Among often used structures belong structures having snapback type of I-V characteristic. Typical is a gate-grounded NMOS transistor [3] or a SCR [3]. This text is dealing with the VLSCR structure which enables I-V snap-back characteristics tuning according to the application demand. Simulated technology was CMOS very high voltage (VHV Integrated Circuits). Measurement was done in BiCMOS  process.",
  chapter="49442",
  journal="WSEAS Transactions on Electronics",
  number="8",
  volume="5",
  year="2008",
  month="august",
  pages="350--359",
  type="journal article"
}