Publication detail

SPICE modelling of memcapacitor

BIOLEK, D. BIOLEK, Z. BIOLKOVÁ, V.

Original Title

SPICE modelling of memcapacitor

English Title

SPICE modelling of memcapacitor

Type

journal article

Language

en

Original Abstract

A methodology for SPICE modelling of a memcapacitor is described. The model is compounded of the submodel of the state-space system, representing the memory effect of the device, which depends on the concrete physical implementation of the device, and of a capacitor, the capacitance of which is controlled by the system state. The basic fingerprints of the memcapacitor are demonstrated in the example of a charge-controlled memcapacitor.

English abstract

A methodology for SPICE modelling of a memcapacitor is described. The model is compounded of the submodel of the state-space system, representing the memory effect of the device, which depends on the concrete physical implementation of the device, and of a capacitor, the capacitance of which is controlled by the system state. The basic fingerprints of the memcapacitor are demonstrated in the example of a charge-controlled memcapacitor.

Keywords

memcapacitor, memristor, SPICE

RIV year

2010

Released

01.04.2010

Publisher

IET

Location

Anglie

Pages from

520

Pages to

521

Pages count

2

BibTex


@article{BUT48553,
  author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková}",
  title="SPICE modelling of memcapacitor",
  annote="A methodology for SPICE modelling of a memcapacitor is described. The model is compounded of the submodel of the state-space system, representing the memory effect of the device, which depends on the concrete physical implementation of the device, and of a capacitor, the capacitance of which is controlled by the system state. The basic fingerprints of the memcapacitor are demonstrated in the example of a charge-controlled memcapacitor.",
  address="IET",
  chapter="48553",
  institution="IET",
  journal="Electronics Letters",
  number="7",
  volume="46",
  year="2010",
  month="april",
  pages="520--521",
  publisher="IET",
  type="journal article"
}