Publication detail

Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

PAVELKA, J. TANUMA, N. TACANO, M. ŠIKULA, J. HANDEL, P.

Original Title

Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

English Title

Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures

Type

journal article

Language

en

Original Abstract

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 450K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p- and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alpha(H) congruent to 1 and alpha(H) congruent to 2 x 10(-3), respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alpha(H) values of 4x10(-6) to 3x10(-5) or slightly higher in case of In0.7Ga0.3As/In0.52Al0.48As pseudomorphic structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alpha(H) congruent to 10(-6). Using the TLM structures noise analysis we determined, that contact noise was almost negligible.

English abstract

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 450K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p- and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alpha(H) congruent to 1 and alpha(H) congruent to 2 x 10(-3), respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alpha(H) values of 4x10(-6) to 3x10(-5) or slightly higher in case of In0.7Ga0.3As/In0.52Al0.48As pseudomorphic structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alpha(H) congruent to 10(-6). Using the TLM structures noise analysis we determined, that contact noise was almost negligible.

Keywords

1/f noise; InGaAs; HFET; MODFET; HEMT

RIV year

2009

Released

14.06.2009

Publisher

American Institute of Physics

Location

Melville, New York

Pages from

183

Pages to

186

Pages count

4

BibTex


@article{BUT48538,
  author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula} and Peter H. {Handel}",
  title="Low-Frequency Noise Characteristics of InGaAs/InAlAs Heterostructures",
  annote="The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 450K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p- and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alpha(H) congruent to 1 and alpha(H) congruent to 2 x 10(-3), respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alpha(H) values of 4x10(-6) to 3x10(-5) or slightly higher in case of In0.7Ga0.3As/In0.52Al0.48As pseudomorphic structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alpha(H) congruent to 10(-6). Using the TLM structures noise analysis we determined, that contact noise was almost negligible.",
  address="American Institute of Physics",
  chapter="48538",
  institution="American Institute of Physics",
  journal="AIP conference proceedings",
  number="1",
  volume="1129",
  year="2009",
  month="june",
  pages="183--186",
  publisher="American Institute of Physics",
  type="journal article"
}