Publication detail

RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position

ŠIKULA, J. SEDLÁKOVÁ, V. CHVÁTAL, M. PAVELKA, J. TACANO, M. TOITA, M.

Original Title

RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position

English Title

RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position

Type

journal article

Language

en

Original Abstract

Experiments were carried out for n-channel devices, processed in a 0.3 m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. We will give a model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.

English abstract

Experiments were carried out for n-channel devices, processed in a 0.3 m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. We will give a model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.

Keywords

RTS noise, 1/f noise, MOSFET

RIV year

2009

Released

14.06.2009

Publisher

American Institute of Physics

Location

U.S.A.

Pages from

205

Pages to

208

Pages count

4

BibTex


@article{BUT47684,
  author="Josef {Šikula} and Vlasta {Sedláková} and Miloš {Chvátal} and Jan {Pavelka} and Munecazu {Tacano} and Masato {Toita}",
  title="RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position",
  annote="Experiments were carried out for n-channel devices, processed in a 0.3  m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5  m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. We will give a model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position. From the dependence of the capture time constant  c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.",
  address="American Institute of Physics",
  chapter="47684",
  institution="American Institute of Physics",
  journal="AIP conference proceedings",
  number="1",
  volume="1129",
  year="2009",
  month="june",
  pages="205--208",
  publisher="American Institute of Physics",
  type="journal article"
}