Publication detail

Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules

GRMELA, L. KALA, J. TOMÁNEK, P.

Original Title

Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules

English Title

Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules

Type

journal article

Language

en

Original Abstract

The use of QDs as a basis for new optoelectronic devices is very promising, due to a long electron lifetime at their excited levels. Therefore the inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. The preliminary results of experimental and theoretical studies of the optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented.

English abstract

The use of QDs as a basis for new optoelectronic devices is very promising, due to a long electron lifetime at their excited levels. Therefore the inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. The preliminary results of experimental and theoretical studies of the optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented.

Keywords

optical phenomena, SNOM, InAs/GaAs, quantum dot, artificial molecule

RIV year

2006

Released

31.01.2006

Publisher

SPIE

Location

Bellingham, USA

Pages from

517

Pages to

522

Pages count

6

BibTex


@article{BUT45824,
  author="Lubomír {Grmela} and Jaroslav {Kala} and Pavel {Tománek}",
  title="Local photoluminescence in InAs/GaAs heterostructures with quantum dots and artificial molecules",
  annote="The use of QDs as a basis for new optoelectronic devices is very promising, due to a long electron lifetime at their excited levels. Therefore the inter- and intraband light absorption studies in QDs are useful not only for investigations of photodetectors but they also are the necessary condition of the development of new types of mid-infrared lasers. The preliminary results of experimental and theoretical studies of the optical phenomena in n- and p-doped InAs/GaAs QDs and artificial molecules formed by pairs of QDs are presented.",
  address="SPIE",
  chapter="45824",
  institution="SPIE",
  journal="Proceedings of SPIE",
  number="6180",
  volume="6180",
  year="2006",
  month="january",
  pages="517--522",
  publisher="SPIE",
  type="journal article"
}