Publication detail

Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures

PAVELKA, J. TANUMA, N. TACANO, M. ŠIKULA, J.

Original Title

Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures

English Title

Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures

Type

journal article - other

Language

en

Original Abstract

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 300K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p-type and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alfaH ~ 1 and alfaH ~ 2x10-3, respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alfaH values of 4x10-6 to 3x10-5 or slightly higher in case of pseudomorphic In0.7Ga0.3As/In0.52Al0.48As structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alfaH ~ 10-6. Whereas p-type heterostructure noise spectral density was 1/f type in whole temperature range, in case of all n-type samples we observed generation-recombination noise component for temperatures above 200K with trap activation energy of about 0.6eV. At the lowest temperatures, RTS noise given by shallow trap levels was observed too. Using the TLM structures noise analysis we determined, that contact noise was almost negligible.

English abstract

The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 300K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p-type and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alfaH ~ 1 and alfaH ~ 2x10-3, respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alfaH values of 4x10-6 to 3x10-5 or slightly higher in case of pseudomorphic In0.7Ga0.3As/In0.52Al0.48As structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alfaH ~ 10-6. Whereas p-type heterostructure noise spectral density was 1/f type in whole temperature range, in case of all n-type samples we observed generation-recombination noise component for temperatures above 200K with trap activation energy of about 0.6eV. At the lowest temperatures, RTS noise given by shallow trap levels was observed too. Using the TLM structures noise analysis we determined, that contact noise was almost negligible.

Keywords

InGaAs, 1/f noise

RIV year

2005

Released

01.01.2005

Pages from

147

Pages to

154

Pages count

8

BibTex


@article{BUT45791,
  author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula}",
  title="Low frequency noise and trap spectroscopy of InGaAs/InAlAs heterostructures",
  annote="The low frequency noise of InGaAs/InAlAs heterostructures with various In concentration was measured in wide temperature range of 15K up to 300K and experimental characteristics compared with theoretical models of mobility fluctuations due to various scattering processes. Several p-type and n-type doped lattice-matched In0.53Ga0.47As/In0.52Al0.48As samples prepared by NTT reveal Hooge parameter alfaH ~ 1 and alfaH ~ 2x10-3, respectively, which is consistent with the 1/f energy partition fluctuations model. However, most of the n-type samples give alfaH values of 4x10-6 to 3x10-5 or slightly higher in case of pseudomorphic In0.7Ga0.3As/In0.52Al0.48As structures, which is closer to the quantum 1/f noise theory prediction of Hooge parameter about alfaH ~ 10-6. Whereas p-type heterostructure noise spectral density was 1/f type in whole temperature range, in case of all n-type samples we observed generation-recombination noise component for temperatures above 200K with trap activation energy of about 0.6eV. At the lowest temperatures, RTS noise given by shallow trap levels was observed too. Using the TLM structures noise analysis we determined, that contact noise was almost negligible.",
  chapter="45791",
  number="1",
  volume="41",
  year="2005",
  month="january",
  pages="147",
  type="journal article - other"
}