Publication detail

Hooge noise parameter of epitaxial n-GaN on sapphire

TANUMA, N. TACANO, M. PAVELKA, J. HASHIGUCHI, S. ŠIKULA, J. MATSUI, T.

Original Title

Hooge noise parameter of epitaxial n-GaN on sapphire

English Title

Hooge noise parameter of epitaxial n-GaN on sapphire

Type

journal article

Language

en

Original Abstract

The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period.

English abstract

The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period.

Keywords

GaN, 1/f noise

RIV year

2005

Released

01.01.2005

Publisher

Elsevier

Pages from

865

Pages to

870

Pages count

6

BibTex


@article{BUT45789,
  author="Nobuhisa {Tanuma} and Munecazu {Tacano} and Jan {Pavelka} and Sumihisa {Hashiguchi} and Josef {Šikula} and Toshiaki {Matsui}",
  title="Hooge noise parameter of epitaxial n-GaN on sapphire",
  annote="The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period.",
  address="Elsevier",
  chapter="45789",
  institution="Elsevier",
  number="6",
  volume="49",
  year="2005",
  month="january",
  pages="865",
  publisher="Elsevier",
  type="journal article"
}