Publication detail

Optoelectronic noise and photocurrent measurement on GaAs/AlGaAs laser diode with single quantum well

GRMELA, L. DOBIS, P. BRÜSTLOVÁ, J. TOMÁNEK, P.

Original Title

Optoelectronic noise and photocurrent measurement on GaAs/AlGaAs laser diode with single quantum well

English Title

Optoelectronic noise and photocurrent measurement on GaAs/AlGaAs laser diode with single quantum well

Type

journal article in Web of Science

Language

en

Original Abstract

The current progress in optomechatronic applications needs more efficient devices and components with higher reliability, operational lifetime, reduced cost and dimensions as laser diodes, fast photodetectors, modulators. The laser is one key technology in highly industrialized economy. To understand modern efficient laser diode (LD) structures and evaluate their performance, an electrical and optical characterization is necessary. Therefore, low-frequency electrical and optical fluctuation spectra and their cross-correlation factor have been investigated in GaAs/AlGaAs ridge waveguide laser diode with an active region containing a single quantum well layer. It is shown that in the lasing region the intensive Lorentzian-type electrical and optical noises with negative cross-correlation factor are characteristic. This noise is due to charge carrier recombination processes in the interfaces between the active layer and the neighboring layers. To verify it, a complementary insight into the same laser diode structure provided by near-field induced photocurrent technique with 100nm spatial resolution, is also discussed.

English abstract

The current progress in optomechatronic applications needs more efficient devices and components with higher reliability, operational lifetime, reduced cost and dimensions as laser diodes, fast photodetectors, modulators. The laser is one key technology in highly industrialized economy. To understand modern efficient laser diode (LD) structures and evaluate their performance, an electrical and optical characterization is necessary. Therefore, low-frequency electrical and optical fluctuation spectra and their cross-correlation factor have been investigated in GaAs/AlGaAs ridge waveguide laser diode with an active region containing a single quantum well layer. It is shown that in the lasing region the intensive Lorentzian-type electrical and optical noises with negative cross-correlation factor are characteristic. This noise is due to charge carrier recombination processes in the interfaces between the active layer and the neighboring layers. To verify it, a complementary insight into the same laser diode structure provided by near-field induced photocurrent technique with 100nm spatial resolution, is also discussed.

Keywords

low-frequency noise, electrical noise, optical noise, optical nanometrology, scanning near-field optical microscopy, diagnostics, near-field induced photocurrent

RIV year

2007

Released

15.03.2007

Publisher

Taylor&Francis

Pages from

73

Pages to

80

Pages count

8

BibTex


@article{BUT44664,
  author="Lubomír {Grmela} and Pavel {Dobis} and Jitka {Brüstlová} and Pavel {Tománek}",
  title="Optoelectronic noise and photocurrent measurement on GaAs/AlGaAs laser diode with single quantum well",
  annote="The current progress in optomechatronic applications needs more efficient devices and components with higher reliability, operational lifetime, reduced cost and dimensions as laser diodes, fast photodetectors, modulators. The laser is one key technology in highly industrialized economy. To understand modern efficient laser diode (LD) structures and evaluate their performance, an electrical and optical characterization is necessary. Therefore, low-frequency electrical and optical fluctuation spectra and their cross-correlation factor have been investigated in GaAs/AlGaAs ridge waveguide laser diode with an active region containing a single quantum well layer. It is shown that in the lasing region the intensive Lorentzian-type electrical and optical noises with negative cross-correlation factor are characteristic. This noise is due to charge carrier recombination processes in the interfaces between the active layer and the neighboring layers. To verify it, a complementary insight into the same laser diode structure provided by near-field induced photocurrent technique with 100nm spatial resolution, is also discussed.",
  address="Taylor&Francis",
  chapter="44664",
  institution="Taylor&Francis",
  journal="International Journal of Optomechatronics",
  number="1",
  volume="1",
  year="2007",
  month="march",
  pages="73--80",
  publisher="Taylor&Francis",
  type="journal article in Web of Science"
}