Publication detail

Memristor modeling based on its constitutive relation

BIOLKOVÁ, V. KOLKA, Z. BIOLEK, Z. BIOLEK, D.

Original Title

Memristor modeling based on its constitutive relation

English Title

Memristor modeling based on its constitutive relation

Type

conference paper

Language

en

Original Abstract

Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. The constitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. The constitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. The method is used for SPICE modeling of charge- and flux-controlled memristors.

English abstract

Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. The constitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. The constitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. The method is used for SPICE modeling of charge- and flux-controlled memristors.

Keywords

Constitutive relation, memristor, modeling, SPICE

RIV year

2010

Released

30.11.2010

Publisher

NAUN

Location

Tenerife, Spain

ISBN

978-960-474-250-9

Book

Proceedings of the European Conference of Circuits Technology and Devices (ECCTD'10)

Pages from

261

Pages to

264

Pages count

4

BibTex


@inproceedings{BUT35489,
  author="Viera {Biolková} and Zdeněk {Kolka} and Zdeněk {Biolek} and Dalibor {Biolek}",
  title="Memristor modeling based on its constitutive relation",
  annote="Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. The constitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. The constitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. The method is used for SPICE modeling of charge- and flux-controlled memristors.",
  address="NAUN",
  booktitle="Proceedings of the European Conference of Circuits Technology and Devices (ECCTD'10)",
  chapter="35489",
  howpublished="electronic, physical medium",
  institution="NAUN",
  year="2010",
  month="november",
  pages="261--264",
  publisher="NAUN",
  type="conference paper"
}