Publication detail
Contribution to modeling of stressing in microelectronic structures
PULEC, J. SZENDIUCH, I.
Original Title
Contribution to modeling of stressing in microelectronic structures
English Title
Contribution to modeling of stressing in microelectronic structures
Type
conference paper
Language
en
Original Abstract
Topic of my article is modeling of thermomechanical stressing in modern microelectronic structures. Simulations are made using software ANSYS, which is based on Finite Element Method (FEM). Using this method, thermomechanical stressing in various structures was modeled. After simulations, data evaluation and comparison of yielded results was made to determine amplitudes and differences between stressing in various regions of modeled structure and between individual structures.
English abstract
Topic of my article is modeling of thermomechanical stressing in modern microelectronic structures. Simulations are made using software ANSYS, which is based on Finite Element Method (FEM). Using this method, thermomechanical stressing in various structures was modeled. After simulations, data evaluation and comparison of yielded results was made to determine amplitudes and differences between stressing in various regions of modeled structure and between individual structures.
Keywords
ANSYS, Stressing, 3D Structures
RIV year
2010
Released
12.08.2010
ISBN
978-1-4244-7849-1
Book
ISSE 2008 Conference Proceedings
Pages from
383
Pages to
385
Pages count
3
BibTex
@inproceedings{BUT35356,
author="Jiří {Pulec} and Ivan {Szendiuch}",
title="Contribution to modeling of stressing in microelectronic structures",
annote="Topic of my article is modeling of thermomechanical stressing in modern microelectronic structures. Simulations are made using software ANSYS, which is based on Finite Element Method (FEM). Using this method, thermomechanical stressing in various structures was modeled. After simulations, data evaluation and comparison of yielded results was made to determine amplitudes and differences between stressing in various regions of modeled structure and between individual structures.",
booktitle="ISSE 2008 Conference Proceedings",
chapter="35356",
howpublished="print",
year="2010",
month="august",
pages="383--385",
type="conference paper"
}