Publication detail

On the determination of silicon solar cell properties based on capacitance characteristics measurement

MACKŮ, R. KOKTAVÝ, P.

Original Title

On the determination of silicon solar cell properties based on capacitance characteristics measurement

English Title

On the determination of silicon solar cell properties based on capacitance characteristics measurement

Type

conference paper

Language

en

Original Abstract

Diffusion technology based pn junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased pn junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown, too. The capacitance versus reverse voltage was measured using the "Auto balancing bridge method", which proved to serve the purpose very well. From experimental data we calculate electric field intensity and subsequently the properties of local defect is possible to determine.

English abstract

Diffusion technology based pn junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased pn junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown, too. The capacitance versus reverse voltage was measured using the "Auto balancing bridge method", which proved to serve the purpose very well. From experimental data we calculate electric field intensity and subsequently the properties of local defect is possible to determine.

Keywords

Silicon Solar Cell, Barrier Capacitance, Local Defects

RIV year

2010

Released

01.09.2010

Publisher

Novpress

Location

Brno

ISBN

978-80-214-4138-5

Book

Electronic Devices and Systems, IMAPS CS International Conference 2010

Edition

1

Pages from

202

Pages to

208

Pages count

7

BibTex


@inproceedings{BUT35153,
  author="Robert {Macků} and Pavel {Koktavý}",
  title="On the determination of silicon solar cell properties based on capacitance characteristics measurement",
  annote="Diffusion technology based pn junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased pn junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns (microplasma noise) will be shown, too. The capacitance versus reverse voltage was measured using the "Auto balancing bridge method", which proved to serve the purpose very well. From experimental data we calculate electric field intensity and subsequently the properties of local defect is possible to determine.",
  address="Novpress",
  booktitle="Electronic Devices and Systems, IMAPS CS International Conference 2010",
  chapter="35153",
  edition="1",
  howpublished="print",
  institution="Novpress",
  year="2010",
  month="september",
  pages="202--208",
  publisher="Novpress",
  type="conference paper"
}