Publication detail
Performance Testing of a MOSFET Sensor
BLACK, G. BRETT, L. MORETTO, P. BOUSEK, J.
Original Title
Performance Testing of a MOSFET Sensor
English Title
Performance Testing of a MOSFET Sensor
Type
conference paper
Language
en
Original Abstract
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere. The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types.
English abstract
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere. The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types.
Keywords
Safety Sensor performance testing, Hydrogen detection, MOSFET Hydrogen sensor
RIV year
2010
Released
21.05.2010
ISBN
978-3-89336-655-2
Book
Proccedings of 18th World Hydrogen Energy Conference 2010, Essen, Germany
Pages from
301
Pages to
307
Pages count
7
Documents
BibTex
@inproceedings{BUT35005,
author="Jaroslav {Boušek}",
title="Performance Testing of a MOSFET Sensor",
annote="MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere. The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types.",
booktitle="Proccedings of 18th World Hydrogen Energy Conference 2010, Essen, Germany",
chapter="35005",
howpublished="print",
year="2010",
month="may",
pages="301--307",
type="conference paper"
}