Publication detail

Performance Testing of a MOSFET Sensor

BLACK, G. BRETT, L. MORETTO, P. BOUSEK, J.

Original Title

Performance Testing of a MOSFET Sensor

English Title

Performance Testing of a MOSFET Sensor

Type

conference paper

Language

en

Original Abstract

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere. The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types.

English abstract

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere. The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types.

Keywords

Safety Sensor performance testing, Hydrogen detection, MOSFET Hydrogen sensor

RIV year

2010

Released

21.05.2010

ISBN

978-3-89336-655-2

Book

Proccedings of 18th World Hydrogen Energy Conference 2010, Essen, Germany

Pages from

301

Pages to

307

Pages count

7

BibTex 


@inproceedings{BUT35005,
  author="Jaroslav {Boušek}",
  title="Performance Testing of a MOSFET Sensor",
  annote="MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) sensors are based on a triple layer structure consisting of a catalytic gate metal, an insulator (oxide) and a semiconductor layer. Adsorbed hydrogen molecules on the metal surface dissociate and diffuse to the metal-oxide interface where they produce a change in the electrical properties of the transistor, which can be correlated to the hydrogen concentration in the ambient atmosphere.  The performance of 2 identical commercially available MOSFET has been tested in terms of their accuracy, measuring range, cross-sensitivity to CO, as well as the influence of ambient temperature, pressure and relative humidity on their response. Results are compared with those obtained previously for a number of other sensor types.",
  booktitle="Proccedings of 18th World Hydrogen Energy Conference 2010, Essen, Germany",
  chapter="35005",
  howpublished="print",
  year="2010",
  month="may",
  pages="301--307",
  type="conference paper"
}