Publication detail

Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect

MACKŮ, R. KOKTAVÝ, P.

Original Title

Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect

English Title

Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect

Type

conference paper

Language

en

Original Abstract

In this paper a mechanisms affecting excess reverse currents of silicon single-crystalline solar cells was investigated. In principle, significant reverse currents pertinent to solar cells local and/or global imperfections indicate worse reliability. We carried out experiments of U-I curve measurements of local defect-free samples at different temperatures. Two equivalent circuit models for relatively low and high reverse current range were put forward. The former model indicates initial influence of saturation current and leakage current with resistive character. But, the later model deals with parasitic pn junction near the back contact electrode of solar cell. It turns out that, not fully suppressed junction creates in solar cell n+pn+ transistor structure and samples behaviour is affected significantly. Least but not least, the full model validity is verified by means of U-I curve approximation of some different samples.

English abstract

In this paper a mechanisms affecting excess reverse currents of silicon single-crystalline solar cells was investigated. In principle, significant reverse currents pertinent to solar cells local and/or global imperfections indicate worse reliability. We carried out experiments of U-I curve measurements of local defect-free samples at different temperatures. Two equivalent circuit models for relatively low and high reverse current range were put forward. The former model indicates initial influence of saturation current and leakage current with resistive character. But, the later model deals with parasitic pn junction near the back contact electrode of solar cell. It turns out that, not fully suppressed junction creates in solar cell n+pn+ transistor structure and samples behaviour is affected significantly. Least but not least, the full model validity is verified by means of U-I curve approximation of some different samples.

Keywords

solar cell; excess reverse current; electric model; transistor structure

RIV year

2010

Released

30.05.2010

Publisher

Reprotechnika Wroclaw

Location

Wroclaw

ISBN

978-1-4244-5374-0

Book

2010 9th International Conference on Environment end Electrical engineerong

Edition number

1

Pages from

18

Pages to

21

Pages count

4

BibTex


@inproceedings{BUT34936,
  author="Robert {Macků} and Pavel {Koktavý}",
  title="Excess Reverse Current Modeling of Single Junction Si Solar Cells and Transistor n+pn+ Structure Effect",
  annote="In this paper a mechanisms affecting excess reverse currents of silicon single-crystalline solar cells was investigated. In principle, significant reverse currents pertinent to solar cells local and/or global imperfections indicate worse reliability. We carried out experiments of U-I curve measurements of local defect-free samples at different temperatures. Two equivalent circuit models for relatively low and high reverse current range were put forward. The former model indicates initial influence of saturation current and leakage current with resistive character.  But, the later model deals with parasitic pn junction near the back contact electrode of solar cell.  It turns out that, not fully suppressed junction creates in solar cell n+pn+ transistor structure and samples behaviour is affected significantly. Least but not least, the full model validity is verified by means of U-I curve approximation of some different samples.",
  address="Reprotechnika Wroclaw",
  booktitle="2010 9th International Conference on Environment end Electrical engineerong",
  chapter="34936",
  howpublished="print",
  institution="Reprotechnika Wroclaw",
  year="2010",
  month="may",
  pages="18--21",
  publisher="Reprotechnika Wroclaw",
  type="conference paper"
}