Publication detail

Semi-numerical simulation of silicon solar cells junction geometry using C-U profiling techniques

MACKŮ, R.

Original Title

Semi-numerical simulation of silicon solar cells junction geometry using C-U profiling techniques

English Title

Semi-numerical simulation of silicon solar cells junction geometry using C-U profiling techniques

Type

conference paper

Language

en

Original Abstract

This paper reports issue of a geometry and pn junction position assessment in order to electro-optical properties optimalization for different applications. In addition, examination of the mentioned parameters may have fundamental matter to interpretation of unconventional electrical characteristic such as current-voltage curves or quantum efficient curves. Sample analysis, presented here, is based on experimental measurement of C-U curves and numerical simulation of impurities diffusion from gaseous state (assume constant gas pressure). We managed to get information about junction position and junction width even thought junction is strongly unsymmetrical and its part must be neglected in case of analytical solution. Last but not least, we discuss issue of reduction or/and expansion of junction width with reverse voltage due to surface geometrical texturizing. To this end, the microscopic study of the samples surface is presented, too.

English abstract

This paper reports issue of a geometry and pn junction position assessment in order to electro-optical properties optimalization for different applications. In addition, examination of the mentioned parameters may have fundamental matter to interpretation of unconventional electrical characteristic such as current-voltage curves or quantum efficient curves. Sample analysis, presented here, is based on experimental measurement of C-U curves and numerical simulation of impurities diffusion from gaseous state (assume constant gas pressure). We managed to get information about junction position and junction width even thought junction is strongly unsymmetrical and its part must be neglected in case of analytical solution. Last but not least, we discuss issue of reduction or/and expansion of junction width with reverse voltage due to surface geometrical texturizing. To this end, the microscopic study of the samples surface is presented, too.

Keywords

solar cell characterization

RIV year

2010

Released

29.04.2010

Publisher

Novpress

Location

Brno

ISBN

978-80-214-4080-7

Book

proceedings of the 16th conference student eeict 2010 vol. 5

Edition number

1

Pages from

217

Pages to

221

Pages count

5

BibTex


@inproceedings{BUT34935,
  author="Robert {Macků}",
  title="Semi-numerical simulation of silicon solar cells junction geometry using C-U profiling techniques",
  annote="This paper reports issue of a geometry and pn junction position assessment in order to electro-optical properties optimalization for different applications. In addition, examination of the mentioned parameters may have fundamental matter to interpretation of unconventional electrical characteristic such as current-voltage curves or quantum efficient curves.  Sample analysis, presented here, is based on experimental measurement of C-U curves and numerical simulation of impurities diffusion from gaseous state (assume constant gas pressure). We managed to get information about junction position and junction width even thought junction is strongly unsymmetrical and its part must be neglected in case of analytical solution. Last but not least, we discuss issue of reduction or/and expansion of junction width with reverse voltage due to surface geometrical texturizing. To this end, the microscopic study of the samples surface is presented, too.",
  address="Novpress",
  booktitle="proceedings of the 16th conference student eeict 2010 vol. 5",
  chapter="34935",
  howpublished="print",
  institution="Novpress",
  year="2010",
  month="april",
  pages="217--221",
  publisher="Novpress",
  type="conference paper"
}