Publication detail

Anodic bonding process in MEMS applications

PEKÁREK, J. VRBA, R. MAGÁT, M.

Original Title

Anodic bonding process in MEMS applications

English Title

Anodic bonding process in MEMS applications

Type

conference paper

Language

en

Original Abstract

Anodic bonding is a method for joining glass to silicon. It is one of the important steps for packaging MEMS components. The bonding mechanism joins the glass and silicon by heating them above 400 C and by applying an external DC electric field in a range of 500 - 1000 V. The bonded region can be seen easily through the glass because it changes the colour to gray. The measured bonding strength is over 15 MPa and the cracks occur on the glass, i.e. the bonding strength is over the mechanical strength of the glass.

English abstract

Anodic bonding is a method for joining glass to silicon. It is one of the important steps for packaging MEMS components. The bonding mechanism joins the glass and silicon by heating them above 400 C and by applying an external DC electric field in a range of 500 - 1000 V. The bonded region can be seen easily through the glass because it changes the colour to gray. The measured bonding strength is over 15 MPa and the cracks occur on the glass, i.e. the bonding strength is over the mechanical strength of the glass.

Keywords

Anodic bonding, packaging, micro electro-mechanical systems (MEMS).

RIV year

2010

Released

30.08.2010

Publisher

Brno University of Technology, Faculty of Electrical Engineering and Communication

Location

Tiskárna Atom, Ltd. Chuchelna 254, Semily

ISBN

978-80-214-4139-2

Book

Proceedings of 8th international conference KRÁLÍKY 2010

Edition number

1.

Pages from

103

Pages to

105

Pages count

3

BibTex


@inproceedings{BUT34624,
  author="Jan {Pekárek} and Radimír {Vrba} and Martin {Magát}",
  title="Anodic bonding process in MEMS applications",
  annote="Anodic bonding is a method for joining glass to silicon. It is one of the important steps for packaging MEMS components. The bonding mechanism joins the glass and silicon by heating them above 400 C and by applying an external DC electric field in a range of 500 - 1000 V. The bonded region can be seen easily through the glass because it changes the colour to gray. The measured bonding strength is over 15 MPa and the cracks occur on the glass, i.e. the bonding strength is over the mechanical strength of the glass.",
  address="Brno University of Technology, Faculty of Electrical Engineering and Communication",
  booktitle="Proceedings of 8th international conference KRÁLÍKY 2010",
  chapter="34624",
  howpublished="print",
  institution="Brno University of Technology, Faculty of Electrical Engineering and Communication",
  year="2010",
  month="august",
  pages="103--105",
  publisher="Brno University of Technology, Faculty of Electrical Engineering and Communication",
  type="conference paper"
}