Publication detail

Innovative electric model of n+p silicon solar cells

MACKŮ, R. KOKTAVÝ, P. ŠKARVADA, P.

Original Title

Innovative electric model of n+p silicon solar cells

English Title

Innovative electric model of n+p silicon solar cells

Type

conference paper

Language

en

Original Abstract

This paper is intended to present the results of our research whose objective consists in describing the behaviour of silicon solar cells, which have been prepared using the diffusion technology. In general, heavy current densities are being observed in the specimens. Why it is so, is the subject of our study. To describe the behaviour of the solar cells, we are using U-I characteristics. We suggest the physical nature of an unconventional behavior of the solar cells without apparent local avalanche and thermal breakdowns by means of electrical model. The model is based on our knowledge of the solar cell production technology, in which the solar cell p+n junction arises through the diffusion of gaseous dopants on the top as well as at the bottom of the substrate. In consequence, an n+pn+ bipolar transistor structure is arising. This structure is suppressed in the course of the rear contact creation, however, not throughout the whole volume. A mathematical description of the equivalent circuit model will be put forward, in which the solar cell current will be expressed by means of a transcendent equation. The applicability of the theoretical model has been verified by comparing with the K4 and Z1 specimen's characteristic. By approximating the measured curves by our theoretical circuit function we managed to get new pieces of information concerning the processes taking place in the specimen.

English abstract

This paper is intended to present the results of our research whose objective consists in describing the behaviour of silicon solar cells, which have been prepared using the diffusion technology. In general, heavy current densities are being observed in the specimens. Why it is so, is the subject of our study. To describe the behaviour of the solar cells, we are using U-I characteristics. We suggest the physical nature of an unconventional behavior of the solar cells without apparent local avalanche and thermal breakdowns by means of electrical model. The model is based on our knowledge of the solar cell production technology, in which the solar cell p+n junction arises through the diffusion of gaseous dopants on the top as well as at the bottom of the substrate. In consequence, an n+pn+ bipolar transistor structure is arising. This structure is suppressed in the course of the rear contact creation, however, not throughout the whole volume. A mathematical description of the equivalent circuit model will be put forward, in which the solar cell current will be expressed by means of a transcendent equation. The applicability of the theoretical model has been verified by comparing with the K4 and Z1 specimen's characteristic. By approximating the measured curves by our theoretical circuit function we managed to get new pieces of information concerning the processes taking place in the specimen.

Keywords

Silicon Solar Cell, Non-destructive Testing, Electric model

RIV year

2009

Released

21.10.2010

Publisher

WIP-Renewable Energies

ISBN

3-936338-24-8

Book

Proceedings of 24rd European Photovoltaic Solar Energy Conference

Pages from

439

Pages to

443

Pages count

4

BibTex


@inproceedings{BUT32872,
  author="Robert {Macků} and Pavel {Koktavý} and Pavel {Škarvada}",
  title="Innovative electric model of n+p silicon solar cells",
  annote="This paper is intended to present the results of our research whose objective consists in describing the behaviour of silicon solar cells, which have been prepared using the diffusion technology. In general, heavy current densities are being observed in the specimens. Why it is so, is the subject of our study. To describe the behaviour of the solar cells, we are using U-I characteristics. We suggest the physical nature of an unconventional behavior of the solar cells without apparent local avalanche and thermal breakdowns by means of electrical model. The model is based on our knowledge of the solar cell production technology, in which the solar cell p+n junction arises through the diffusion of gaseous dopants on the top as well as at the bottom of the substrate. In consequence, an n+pn+ bipolar transistor structure is arising. This structure is suppressed in the course of the rear contact creation, however, not throughout the whole volume. A mathematical description of the equivalent circuit model will be put forward, in which the solar cell current will be expressed by means of a transcendent equation. The applicability of the theoretical model has been verified by comparing with the K4 and Z1 specimen's characteristic. By approximating the measured curves by our theoretical circuit function we managed to get new pieces of information concerning the processes taking place in the specimen.",
  address="WIP-Renewable Energies",
  booktitle="Proceedings of 24rd European Photovoltaic Solar Energy Conference",
  chapter="32872",
  howpublished="online",
  institution="WIP-Renewable Energies",
  year="2010",
  month="october",
  pages="439--443",
  publisher="WIP-Renewable Energies",
  type="conference paper"
}