Publication detail

Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

ŠIKULA, J. HLÁVKA, J. SEDLÁKOVÁ, V. HÖSCHEL, P. GRILL, R. SITA, Z. ZEDNÍČEK, T. TACANO, M.

Original Title

Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

English Title

Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

Type

conference paper

Language

en

Original Abstract

An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.

English abstract

An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.

Keywords

Capacitor, NbO, Ta, MIS

RIV year

2005

Released

01.01.2005

Pages from

244

Pages to

248

Pages count

5

BibTex


@inproceedings{BUT31370,
  author="Josef {Šikula} and Jan {Hlávka} and Vlasta {Sedláková} and Pavel {Höschel} and Roman {Grill} and Zdeněk {Sita} and Tomáš {Zedníček} and Munecazu {Tacano}",
  title="Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison",
  annote="An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.",
  booktitle="25th Capacitor and Resistor Technology Symposium",
  chapter="31370",
  number="3",
  year="2005",
  month="january",
  pages="244",
  type="conference paper"
}