Publication detail

Near-field photoelectric measurement of Si solar cells

ŠKARVADA, P. TOMÁNEK, P. MACKŮ, R.

Original Title

Near-field photoelectric measurement of Si solar cells

English Title

Near-field photoelectric measurement of Si solar cells

Type

conference paper

Language

en

Original Abstract

This paper treats of nondestructive local silicon solar cell sample measurement and characterization. Used method, harnessing scanning near field optical microscope in reflection regime with keying laser excitation, allows a localization and characterization of structure imperfections. Keyingless and keying optical excitation measurement methods are discussed. Low energy optical excitation permits measurement only in small range of I-V characteristics, where the shunt resistance is dominant. Described method has been adapted for the simultaneous measurement of sample surface topography, its optical properties as well as sample local photoelectric properties. Structure imperfections taking effect on current voltage characteristics were observed and its size, photoelectric and electric properties were measured. Although the relationships of local imperfection with electric measurement were ascertained, their confirmation will be a subject of ongoing work.

English abstract

This paper treats of nondestructive local silicon solar cell sample measurement and characterization. Used method, harnessing scanning near field optical microscope in reflection regime with keying laser excitation, allows a localization and characterization of structure imperfections. Keyingless and keying optical excitation measurement methods are discussed. Low energy optical excitation permits measurement only in small range of I-V characteristics, where the shunt resistance is dominant. Described method has been adapted for the simultaneous measurement of sample surface topography, its optical properties as well as sample local photoelectric properties. Structure imperfections taking effect on current voltage characteristics were observed and its size, photoelectric and electric properties were measured. Although the relationships of local imperfection with electric measurement were ascertained, their confirmation will be a subject of ongoing work.

Keywords

Scanning Near-field Optical Microscope, Silicon Solar Cell, Photoelectric Properties

RIV year

2009

Released

21.09.2009

Location

Hamburg, Germany

ISBN

3-936338-25-6

Book

24th European Photovoltaic Solar Energy Conference Proceedings

Pages from

480

Pages to

483

Pages count

4

BibTex


@inproceedings{BUT29732,
  author="Pavel {Škarvada} and Pavel {Tománek} and Robert {Macků}",
  title="Near-field photoelectric measurement of Si solar cells",
  annote="This paper treats of nondestructive local silicon solar cell sample measurement and characterization. Used method, harnessing scanning near field optical microscope in reflection regime with keying laser excitation, allows a localization and characterization of structure imperfections. Keyingless and keying optical excitation measurement methods are discussed. Low energy optical excitation permits measurement only in small range of I-V characteristics, where the shunt resistance is dominant. Described method has been adapted for the simultaneous measurement of sample surface topography, its optical properties as well as sample local photoelectric properties. Structure imperfections taking effect on current voltage characteristics were observed and its size, photoelectric and electric properties were measured. Although the relationships of local imperfection with electric measurement were ascertained, their confirmation will be a subject of ongoing work.",
  booktitle="24th European Photovoltaic Solar Energy Conference Proceedings",
  chapter="29732",
  howpublished="print",
  year="2009",
  month="september",
  pages="480--483",
  type="conference paper"
}