Publication detail

PC controled equipment for FAST TRANSIENTS TESTING OF SILICON SOLAR CELLS

BOUŠEK, J.

Original Title

PC controled equipment for FAST TRANSIENTS TESTING OF SILICON SOLAR CELLS

English Title

PC controled equipment for FAST TRANSIENTS TESTING OF SILICON SOLAR CELLS

Type

conference paper

Language

en

Original Abstract

A simple method using fast transients has been suggested and demonstrated for the set of different quality photovoltaic cells. New approach uses PC controlled equipment. Cells parameters as the reverse breakdown voltage, depletion layer width and junction capacitance, serial and parallel resistance and lifetime of minority carriers in bulk can be taken easily. To suppress the influence of the depletion layer capacitance voltage bias was set by the dark current excitation.

English abstract

A simple method using fast transients has been suggested and demonstrated for the set of different quality photovoltaic cells. New approach uses PC controlled equipment. Cells parameters as the reverse breakdown voltage, depletion layer width and junction capacitance, serial and parallel resistance and lifetime of minority carriers in bulk can be taken easily. To suppress the influence of the depletion layer capacitance voltage bias was set by the dark current excitation.

Keywords

crystalline silicon solar cells, minority carrier lifetime, breakdown voltage

RIV year

2007

Released

20.09.2007

Publisher

nakl. Ing. Zdeněk Novotný, Brno

ISBN

978-80-214-3470-7

Book

Electronic Devices and Systems, EDS´07 PROCEEDINGS 2

Edition number

2

Pages from

415

Pages to

420

Pages count

6

BibTex


@inproceedings{BUT28210,
  author="Jaroslav {Boušek}",
  title="PC controled equipment for FAST TRANSIENTS TESTING OF SILICON SOLAR CELLS",
  annote="A simple method using fast transients has been suggested and demonstrated for the set of different quality photovoltaic cells. New approach uses PC controlled equipment. Cells parameters as the reverse breakdown voltage, depletion layer width and junction capacitance, serial and parallel resistance and lifetime of minority carriers in bulk can be taken easily. To suppress the influence of the depletion layer capacitance voltage bias was set by the dark current excitation.",
  address="nakl. Ing. Zdeněk Novotný, Brno",
  booktitle="Electronic Devices and Systems, EDS´07 PROCEEDINGS 2",
  chapter="28210",
  institution="nakl. Ing. Zdeněk Novotný, Brno",
  year="2007",
  month="september",
  pages="415--420",
  publisher="nakl. Ing. Zdeněk Novotný, Brno",
  type="conference paper"
}