Publication detail

Precise Evaluation of Fast Transients in Testing of Silicon Solar Cells

BOUŠEK, J. PORUBA, A.

Original Title

Precise Evaluation of Fast Transients in Testing of Silicon Solar Cells

English Title

Precise Evaluation of Fast Transients in Testing of Silicon Solar Cells

Type

conference paper

Language

en

Original Abstract

Parameters of fotovoltaic cells as the reverse breakdown voltage, depletion layer width and junction capacitance, serial and parallel resistance and lifetime of minority carriers in bulk can be taken easily using the cell response to fast transients. Since the dark forward current forced into the N+P junction is mainly the electron current from the N+ emitter to P base - the relaxation time is given rather by recombination of electrons in the P base. It means that there is only low influence of the surface recombination and recombination in N+ layer and thus the time constant which can be found this way is more consistent with the bulk minority carriers lifetime.

English abstract

Parameters of fotovoltaic cells as the reverse breakdown voltage, depletion layer width and junction capacitance, serial and parallel resistance and lifetime of minority carriers in bulk can be taken easily using the cell response to fast transients. Since the dark forward current forced into the N+P junction is mainly the electron current from the N+ emitter to P base - the relaxation time is given rather by recombination of electrons in the P base. It means that there is only low influence of the surface recombination and recombination in N+ layer and thus the time constant which can be found this way is more consistent with the bulk minority carriers lifetime.

Keywords

crystalline silicon solar cells, minority carrier lifetime, breakdown voltage

RIV year

2007

Released

07.09.2007

Publisher

WIP-Renewable Energies, 2007

Location

Milano, Italy

ISBN

3-936338-22-1

Book

In 22nd European Photovoltaic Solar Energy Conference

Edition number

1

Pages from

385

Pages to

388

Pages count

4

BibTex


@inproceedings{BUT28204,
  author="Jaroslav {Boušek} and Aleš {Poruba}",
  title="Precise Evaluation of Fast Transients in Testing of Silicon Solar Cells",
  annote="Parameters of fotovoltaic cells as the reverse breakdown voltage, depletion layer width and junction capacitance, serial and parallel resistance and lifetime of minority carriers in bulk can be taken easily using the cell response to fast transients. Since the dark forward current forced into the N+P junction is mainly the electron current from the N+ emitter to P base - the relaxation time is given rather by recombination of electrons in the P base. It means that there is only low influence of the surface recombination and recombination in N+ layer and thus the time constant which can be found this way is more consistent with the bulk minority carriers lifetime.",
  address="WIP-Renewable Energies, 2007",
  booktitle="In 22nd European Photovoltaic Solar Energy Conference",
  chapter="28204",
  institution="WIP-Renewable Energies, 2007",
  year="2007",
  month="september",
  pages="385--388",
  publisher="WIP-Renewable Energies, 2007",
  type="conference paper"
}