Publication detail

Electro-ultrasonic Spectroscopy of Polymer Based and Cermet Thick Film Resistors

SEDLÁKOVÁ, V.

Original Title

Electro-ultrasonic Spectroscopy of Polymer Based and Cermet Thick Film Resistors

English Title

Electro-ultrasonic Spectroscopy of Polymer Based and Cermet Thick Film Resistors

Type

conference paper

Language

en

Original Abstract

We have studied the quality of polymer based and cermet thick film layers. The samples were made using different resistive and conducting pastes and dipping silvers. We have applied new principle for non-destructive testing of conducting solids which is based on the phonon interaction with conducting electrons. The ultrasonic signal changes the contact area between conducting grains and then resistance is modulated by frequency of ultrasonic excitation. Resultant intermodulation voltage depends on the value of ac current varying with frequency fE and on the ultrasonic excited resistance change ?R varying with frequency fU. The intermodulation component of frequency fm = fE - fU varies linearly with electric excitation. The dependence of the intermodulation component on the ultrasonic excitation is influenced by the resistive layer material. The amplitude of the intermodulation component Um is proportional to the ultrasonic voltage UU a, with the power a=0.7 to 2. For high values of ultrasonic excitation the saturation of Um is observed. We have used the short current pulse from capacitor discharge as a stressing method for resistor degradation. The amplitude of intermodulation component increases after resistor degradation. The method can be used a diagnostic tool for thick film resistor quality and reliability assessment.

English abstract

We have studied the quality of polymer based and cermet thick film layers. The samples were made using different resistive and conducting pastes and dipping silvers. We have applied new principle for non-destructive testing of conducting solids which is based on the phonon interaction with conducting electrons. The ultrasonic signal changes the contact area between conducting grains and then resistance is modulated by frequency of ultrasonic excitation. Resultant intermodulation voltage depends on the value of ac current varying with frequency fE and on the ultrasonic excited resistance change ?R varying with frequency fU. The intermodulation component of frequency fm = fE - fU varies linearly with electric excitation. The dependence of the intermodulation component on the ultrasonic excitation is influenced by the resistive layer material. The amplitude of the intermodulation component Um is proportional to the ultrasonic voltage UU a, with the power a=0.7 to 2. For high values of ultrasonic excitation the saturation of Um is observed. We have used the short current pulse from capacitor discharge as a stressing method for resistor degradation. The amplitude of intermodulation component increases after resistor degradation. The method can be used a diagnostic tool for thick film resistor quality and reliability assessment.

Keywords

Electro-Ultrasonic Spectroscopy, Cermet, Polymer Based, Thick Film Resistors

RIV year

2007

Released

01.01.2007

Publisher

IMAPS Nordic

Location

Finsko

Pages from

450

Pages to

455

Pages count

6

BibTex


@inproceedings{BUT27976,
  author="Vlasta {Sedláková}",
  title="Electro-ultrasonic Spectroscopy of Polymer Based and Cermet Thick Film Resistors",
  annote="We have studied the quality of polymer based and cermet thick film layers. The samples were made using different resistive and conducting pastes and dipping silvers. We have applied new principle for non-destructive testing of conducting solids which is based on the phonon interaction with conducting electrons. The ultrasonic signal changes the contact area between conducting grains and then resistance is modulated by frequency of ultrasonic excitation. Resultant intermodulation voltage depends on the value of ac current varying with frequency fE and on the ultrasonic excited resistance change ?R varying with frequency fU. The intermodulation component of frequency fm = fE - fU varies linearly with electric excitation. The dependence of the intermodulation component on the ultrasonic excitation is influenced by the resistive layer material. The amplitude of the intermodulation component Um is proportional to the ultrasonic voltage UU a, with the power a=0.7 to 2. For high values of ultrasonic excitation the saturation of Um is observed.  We have used the short current pulse from capacitor discharge as a stressing method for resistor degradation. The amplitude of intermodulation component increases after resistor degradation. The method can be used a diagnostic tool for thick film resistor quality and reliability assessment.",
  address="IMAPS Nordic",
  booktitle="Proceedings EMPC 2007",
  chapter="27976",
  institution="IMAPS Nordic",
  year="2007",
  month="january",
  pages="450--455",
  publisher="IMAPS Nordic",
  type="conference paper"
}