Publication detail

RTS noise in submicron devices

PAVELKA, J. ŠIKULA, J. CHVÁTAL, M. TACANO, M.

Original Title

RTS noise in submicron devices

English Title

RTS noise in submicron devices

Type

conference paper

Language

en

Original Abstract

Low frequency noise of Si MOSFET, GaN/AlGaN and InGaAs/InAlAs heterostructure devices was measured, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method and in most samples revealed almost constant spectral density of crossing rate fluctuation, although non-Poisson mechanism of charge carrier capture and emission was observed in the InGaAs sample, resulting in pulse length correlation and periodical crossing rate modulation.

English abstract

Low frequency noise of Si MOSFET, GaN/AlGaN and InGaAs/InAlAs heterostructure devices was measured, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method and in most samples revealed almost constant spectral density of crossing rate fluctuation, although non-Poisson mechanism of charge carrier capture and emission was observed in the InGaAs sample, resulting in pulse length correlation and periodical crossing rate modulation.

Keywords

RTS noise, 1/f noise, MOSFET, HFET, GaN, InGaAs

RIV year

2007

Released

15.11.2007

Publisher

VUT

Location

Brno

ISBN

978-80-7355-078-3

Book

New Trends in Physics

Pages from

114

Pages to

117

Pages count

4

BibTex


@inproceedings{BUT27882,
  author="Jan {Pavelka} and Josef {Šikula} and Miloš {Chvátal} and Munecazu {Tacano}",
  title="RTS noise in submicron devices",
  annote="Low frequency noise of Si MOSFET, GaN/AlGaN and InGaAs/InAlAs heterostructure devices was measured, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method and in most samples revealed almost constant spectral density of crossing rate fluctuation, although non-Poisson mechanism of charge carrier capture and emission was observed in the InGaAs sample, resulting in pulse length correlation and periodical crossing rate modulation.",
  address="VUT",
  booktitle="New Trends in Physics",
  chapter="27882",
  institution="VUT",
  year="2007",
  month="november",
  pages="114--117",
  publisher="VUT",
  type="conference paper"
}