Publication detail

Modeling of quantization effects in NMOSFET channel

RECMAN, M.

Original Title

Modeling of quantization effects in NMOSFET channel

English Title

Modeling of quantization effects in NMOSFET channel

Type

conference paper

Language

en

Original Abstract

In short channel NMOSFET simulations, the threshold voltage is increased if the quantization effects are present. The contribution describes the influence of quantum mechanical size quantization effects in NMOSFET channel on the electrical properties of NMOS transistor. Normal drift diffusion simulation (neglecting quantum effects), simulations including quantum correction models (van Dort model, the density gradient model) and the simulation including direct solution of the Schroedinger equation are compared. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tools TECPLOT and INSPECT.

English abstract

In short channel NMOSFET simulations, the threshold voltage is increased if the quantization effects are present. The contribution describes the influence of quantum mechanical size quantization effects in NMOSFET channel on the electrical properties of NMOS transistor. Normal drift diffusion simulation (neglecting quantum effects), simulations including quantum correction models (van Dort model, the density gradient model) and the simulation including direct solution of the Schroedinger equation are compared. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tools TECPLOT and INSPECT.

Keywords

Device simulation, Electrical simulation, Parameter extraction, Device modeling, Curve fitting, 2D, Threshold voltage, Quantization effects, Van Dort model, Density gradient model, Schroedinger-Poisson solver

RIV year

2007

Released

01.01.2007

Publisher

Nakl. Novotný

Location

Brno

ISBN

978-80-214-3470-7

Book

Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007

Pages from

442

Pages to

446

Pages count

5

BibTex


@inproceedings{BUT25396,
  author="Milan {Recman}",
  title="Modeling of quantization effects in NMOSFET channel",
  annote="In short channel NMOSFET simulations, the threshold voltage is increased if the quantization effects are present. The contribution describes the influence of quantum mechanical size quantization effects in NMOSFET channel on the electrical properties of NMOS transistor. Normal drift diffusion simulation (neglecting quantum effects), simulations including quantum correction models (van Dort model, the density gradient model) and the simulation including direct solution of the Schroedinger equation are compared. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tools TECPLOT and INSPECT.",
  address="Nakl. Novotný",
  booktitle="Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007",
  chapter="25396",
  institution="Nakl. Novotný",
  year="2007",
  month="january",
  pages="442",
  publisher="Nakl. Novotný",
  type="conference paper"
}