Publication detail

TCAD simulation using van Dort quantum correction model

RECMAN, M.

Original Title

TCAD simulation using van Dort quantum correction model

English Title

TCAD simulation using van Dort quantum correction model

Type

conference paper

Language

en

Original Abstract

Some features of current MOSFETs (oxide thickness, channel width) have reached quantum mechanical length scales. Therefore, the wave nature of electrons and holes can no longer be neglected. The contribution deals with TCAD simulation of quantum corrections (QC) in the MOSFET channel. This effect is described by the phenomenological van Dort model, which accounts for the size quantization by increasing the effective band gap in the high-field region. The method to activate the van Dort model in DESSIS and to extract the threshold voltage increase and the subthreshold current reduction due to QC is described. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tool INSPECT.

English abstract

Some features of current MOSFETs (oxide thickness, channel width) have reached quantum mechanical length scales. Therefore, the wave nature of electrons and holes can no longer be neglected. The contribution deals with TCAD simulation of quantum corrections (QC) in the MOSFET channel. This effect is described by the phenomenological van Dort model, which accounts for the size quantization by increasing the effective band gap in the high-field region. The method to activate the van Dort model in DESSIS and to extract the threshold voltage increase and the subthreshold current reduction due to QC is described. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tool INSPECT.

Keywords

Device simulation, Electrical simulation, Parameter extraction, Device modeling, Curve fitting, Device optimization. 2D, Threshold voltage, Quantum corrections,Van Dort model, DESSIS

RIV year

2007

Released

01.01.2007

Publisher

nakl. Novotný

Location

Brno

ISBN

978-80-214-3470-7

Book

Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007

Pages from

437

Pages to

441

Pages count

5

BibTex


@inproceedings{BUT25395,
  author="Milan {Recman}",
  title="TCAD simulation using van Dort quantum correction model",
  annote="Some features of current MOSFETs (oxide thickness, channel width) have reached quantum mechanical length scales. Therefore, the wave nature of electrons and holes can no longer be neglected. The contribution deals with TCAD simulation of quantum corrections (QC) in the MOSFET channel. This effect is described by the phenomenological van Dort model, which accounts for the size quantization by increasing the effective band gap in the high-field region. The method to activate the van Dort model in DESSIS and to extract the threshold voltage increase and the subthreshold current reduction  due to QC is described. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tool INSPECT.",
  address="nakl. Novotný",
  booktitle="Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007",
  chapter="25395",
  institution="nakl. Novotný",
  year="2007",
  month="january",
  pages="437--441",
  publisher="nakl. Novotný",
  type="conference paper"
}