Publication detail

Low frequency noise in submicron MOSFETs

PAVELKA, J., ŠIKULA, J., TACANO, M.

Original Title

Low frequency noise in submicron MOSFETs

English Title

Low frequency noise in submicron MOSFETs

Type

conference paper

Language

en

Original Abstract

Low frequency noise of Si N-MOSFET and GaN/Al/GaN HFET devices was mesured down to microHz region, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method.

English abstract

Low frequency noise of Si N-MOSFET and GaN/Al/GaN HFET devices was mesured down to microHz region, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method.

RIV year

2006

Released

01.01.2006

Publisher

IMAPS CS

Location

Brno

ISBN

80-214-3246-2

Book

Proceedings of IMAPS CS International Conference Electronic Devices and Systems 2006

Pages from

148

Pages to

153

Pages count

6

BibTex


@inproceedings{BUT25042,
  author="Jan {Pavelka} and Josef {Šikula} and Munecazu {Tacano}",
  title="Low frequency noise in submicron MOSFETs",
  annote="Low frequency noise of Si N-MOSFET and GaN/Al/GaN HFET devices was mesured down to microHz region, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method.",
  address="IMAPS CS",
  booktitle="Proceedings of IMAPS CS International Conference Electronic Devices and Systems 2006",
  chapter="25042",
  institution="IMAPS CS",
  year="2006",
  month="january",
  pages="148",
  publisher="IMAPS CS",
  type="conference paper"
}