Publication detail

Bias Voltage Control for RF PE CVD

Boušek J.

Original Title

Bias Voltage Control for RF PE CVD

English Title

Bias Voltage Control for RF PE CVD

Type

conference paper

Language

en

Original Abstract

To maintain high reproducibility of the RF PE CVD deposition process the ratio of the deposition rate to sputtering rate must be controlled precisely. To determine the ion bombardment the voltage difference between plasma and substrate must be controlled. In paper are suggested and discussed various possibilities how to control the RF bias voltage of substrate holder. To enhance the decomposition of reactant gases to reactive species and simultaneously ensure defined ion bombardment use of two RF frequency power supply might be an optimal solution.

English abstract

To maintain high reproducibility of the RF PE CVD deposition process the ratio of the deposition rate to sputtering rate must be controlled precisely. To determine the ion bombardment the voltage difference between plasma and substrate must be controlled. In paper are suggested and discussed various possibilities how to control the RF bias voltage of substrate holder. To enhance the decomposition of reactant gases to reactive species and simultaneously ensure defined ion bombardment use of two RF frequency power supply might be an optimal solution.

Keywords

RF PE CVD, Sputtering, Ion bombardment, Substrate bias

Released

14.10.2006

Publisher

Nakl. Novotný

ISBN

960-8025-99-8

Book

Socrates International Conference. Electronic System Design 2006

Pages from

163

Pages to

168

Pages count

6

BibTex


@inproceedings{BUT24896,
  author="Jaroslav {Boušek}",
  title="Bias Voltage Control for RF PE CVD",
  annote="To maintain high reproducibility of the RF PE CVD deposition process the ratio of the deposition rate to sputtering rate must be controlled precisely. To determine the ion bombardment the voltage difference between plasma and substrate must be controlled. In paper are suggested and discussed various possibilities how to control the RF bias voltage of substrate holder. To enhance the decomposition of reactant gases to reactive species and simultaneously ensure defined ion bombardment use of two RF frequency power supply might be an optimal solution.",
  address="Nakl. Novotný",
  booktitle="Socrates International Conference. Electronic System Design 2006",
  chapter="24896",
  institution="Nakl. Novotný",
  year="2006",
  month="october",
  pages="163",
  publisher="Nakl. Novotný",
  type="conference paper"
}