Publication detail

NMOS sensitivity analysis

RECMAN Milan

Original Title

NMOS sensitivity analysis

English Title

NMOS sensitivity analysis

Type

conference paper

Language

en

Original Abstract

The example of using ISE TCAD package to analyze how the variability of process parameters may affect the variability of the threshold voltage simulation response is presented. The real 0.15 µm CMOS technology for low-power application is used. The NMOS transistor structure is generated using ISE TCAD tools DIOS and MDRAW. DESSIS and INSPECT are used to generate device output electrical characteristics and extract analyzed responses. OPTIMISE generates relevant TCAD experiments and calculates sensitivities of threshold voltage to individual process parameters selected.

English abstract

The example of using ISE TCAD package to analyze how the variability of process parameters may affect the variability of the threshold voltage simulation response is presented. The real 0.15 µm CMOS technology for low-power application is used. The NMOS transistor structure is generated using ISE TCAD tools DIOS and MDRAW. DESSIS and INSPECT are used to generate device output electrical characteristics and extract analyzed responses. OPTIMISE generates relevant TCAD experiments and calculates sensitivities of threshold voltage to individual process parameters selected.

Released

01.01.2006

Publisher

Nakl. Novotný

Location

Brno

ISBN

960-8025-99-8

Book

Electronic System Design 2006, Socrates International Conference Proceedings Chania, October 16 – 17, 2006, Greece

Pages from

84

Pages to

87

Pages count

4

BibTex


@inproceedings{BUT24696,
  author="Milan {Recman}",
  title="NMOS sensitivity analysis",
  annote="The example of using ISE TCAD package to analyze how the variability of process parameters may affect the variability of the threshold voltage simulation response is presented. The real 0.15 µm CMOS technology for low-power application is used.  The NMOS transistor structure is generated using ISE TCAD tools DIOS and MDRAW. DESSIS and INSPECT are used to generate device output electrical characteristics and extract analyzed responses. OPTIMISE generates relevant TCAD experiments and calculates sensitivities of threshold voltage to individual process parameters selected.",
  address="Nakl. Novotný",
  booktitle="Electronic System Design 2006, Socrates International Conference Proceedings Chania, October 16 – 17, 2006, Greece",
  chapter="24696",
  institution="Nakl. Novotný",
  year="2006",
  month="january",
  pages="84",
  publisher="Nakl. Novotný",
  type="conference paper"
}