Publication detail

Thin alumina film as a mask for ordered nanostructures by deposition technique

Radim Hrdý, Jaromír Hubálek

Original Title

Thin alumina film as a mask for ordered nanostructures by deposition technique

English Title

Thin alumina film as a mask for ordered nanostructures by deposition technique

Type

conference paper

Language

en

Original Abstract

The alumina pore nanostructures has attracted attention because of its self-ordered hexagonal structure. It can be used as a template nanosize structure, for many devices such as magnetic, electronic and optoelectronic. The aim of this method is preparation of the mask for electrodepositing nanowires directly on Si substrate. The presented technique without utilization of high-resolution electron-beam lithographs belongs to low-cost technology in the microelectronic industry. Anodic alumina has been prepared in several electrolytes by the anodization process and the characteristics of pore structures have been studied in different anodizing conditions. The thickness of aluminum film for anodization was 1-2 um. The two methods for deposition of aluminum thin film on Si substrate are thermal evaporating and sputtering. The prepared alumina structures have 15-30 nm pore diameters and 30-110 nm interpore distances. The anodization of thin alumina film deposited on Si substrate is a complicated process in comparison with the anodization of aluminum sheet but the unique properties of this method are stability of the prepared structure and simple manipulation in other operations.

English abstract

The alumina pore nanostructures has attracted attention because of its self-ordered hexagonal structure. It can be used as a template nanosize structure, for many devices such as magnetic, electronic and optoelectronic. The aim of this method is preparation of the mask for electrodepositing nanowires directly on Si substrate. The presented technique without utilization of high-resolution electron-beam lithographs belongs to low-cost technology in the microelectronic industry. Anodic alumina has been prepared in several electrolytes by the anodization process and the characteristics of pore structures have been studied in different anodizing conditions. The thickness of aluminum film for anodization was 1-2 um. The two methods for deposition of aluminum thin film on Si substrate are thermal evaporating and sputtering. The prepared alumina structures have 15-30 nm pore diameters and 30-110 nm interpore distances. The anodization of thin alumina film deposited on Si substrate is a complicated process in comparison with the anodization of aluminum sheet but the unique properties of this method are stability of the prepared structure and simple manipulation in other operations.

Keywords

Nanomachinig, pore alumina, electrodeposition

RIV year

2006

Released

25.04.2006

Location

Košice

Pages from

87

Pages to

87

Pages count

1

BibTex


@inproceedings{BUT24676,
  author="Radim {Hrdý} and Jaromír {Hubálek}",
  title="Thin alumina film as a mask for ordered nanostructures by deposition technique",
  annote="The alumina pore nanostructures has attracted attention because of its self-ordered hexagonal structure. It can be used as a template nanosize structure, for many devices such as magnetic, electronic and optoelectronic.  The aim of this method is preparation of the mask for electrodepositing nanowires directly on Si substrate.  The presented technique without utilization of high-resolution electron-beam lithographs belongs to low-cost technology in the microelectronic industry. Anodic alumina has been prepared in several electrolytes by the anodization process and the characteristics of pore structures have been studied in different anodizing conditions. The thickness of aluminum film for anodization was 1-2 um. The two methods for deposition of aluminum thin film on Si substrate are thermal evaporating and sputtering. The prepared alumina structures have 15-30 nm pore diameters and 30-110 nm interpore distances.  The anodization of thin alumina film deposited on Si substrate is a complicated process in comparison with the anodization of aluminum sheet but the unique properties of this method are stability of the prepared structure and simple manipulation in other operations.",
  booktitle="Book of Abstracts",
  chapter="24676",
  year="2006",
  month="april",
  pages="87",
  type="conference paper"
}