Publication detail

Určení obrazu funkce hustoty stavů dekonvolucí spektra koeficientu absorpce na struktuře a-Si:H

LUŇÁK, M.

Original Title

Určení obrazu funkce hustoty stavů dekonvolucí spektra koeficientu absorpce na struktuře a-Si:H

English Title

Study of the spectral dependence of absorption coefficient of field effect transistor structure based on a-Si:H

Type

conference paper

Language

Czech

Original Abstract

This entry presents a study of the spectral dependence of absorption coefficient of field effect transistor structure based on a-Si:H, with the use of constant photocurrent method. By application of the deconvolution algorithm to the spectral dependence of absorption coefficient, the shape of the function of density of states in the mobility gap for selection gate voltage has been obtained.

English abstract

This entry presents a study of the spectral dependence of absorption coefficient of field effect transistor structure based on a-Si:H, with the use of constant photocurrent method. By application of the deconvolution algorithm to the spectral dependence of absorption coefficient, the shape of the function of density of states in the mobility gap for selection gate voltage has been obtained.

Key words in English

a-Si:H constant photocurrent method deconvolution absorption coefficient mobility gap

Authors

LUŇÁK, M.

RIV year

2006

Released

29. 11. 2006

Location

Brno

ISBN

80-7204-487-7

Book

Workshop NDT 2006 Non-Destructive Testing in Engineering Practice

Pages from

98

Pages to

103

Pages count

6

BibTex

@inproceedings{BUT24626,
  author="Miroslav {Luňák}",
  title="Určení obrazu funkce hustoty stavů dekonvolucí spektra koeficientu absorpce na struktuře a-Si:H",
  booktitle="Workshop NDT 2006 Non-Destructive Testing in Engineering Practice",
  year="2006",
  pages="98--103",
  address="Brno",
  isbn="80-7204-487-7"
}