Publication detail
Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors
ŠIKULA, J. SEDLÁKOVÁ, V. SITA, Z.
Original Title
Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors
English Title
Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors
Type
conference paper
Language
en
Original Abstract
The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.
English abstract
The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.
RIV year
2006
Released
01.01.2006
Publisher
Ing. Zdeněk Novotný CSc.
Location
Brno, ČR
ISBN
80-214-3246-2
Book
EDS '06 IMAPS CS International Conference Proceedings
Pages from
154
Pages to
163
Pages count
10
BibTex
@inproceedings{BUT24160,
author="Josef {Šikula} and Vlasta {Sedláková} and Zdeněk {Sita}",
title="Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors",
annote="The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.",
address="Ing. Zdeněk Novotný CSc.",
booktitle="EDS '06 IMAPS CS International Conference Proceedings",
chapter="24160",
institution="Ing. Zdeněk Novotný CSc.",
year="2006",
month="january",
pages="154",
publisher="Ing. Zdeněk Novotný CSc.",
type="conference paper"
}